P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -47A, RDS(ON) =20mΩ @VGS = -10V. RDS(ON) =32mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：104.25 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -47A, RDS(ON) =20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =32mW @VGS = -4.5V. Lead free product is acquired.

文件：900.88 Kbytes 页数：4 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Power MOSFET

文件：1.72149 Mbytes 页数：5 Pages

JIANGSU

长电科技

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.) 60mΩ ID ‐6A Pb‐Free Lead Plating & Halogen Free

文件：213.14 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

文件：198.13 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技