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Description SIPMOS, N-channel, enhancement mode

文件：176.42 Kbytes 页数：6 Pages

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西门子

SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

SIPMOS ® Power Transistor • P channel • Enhancement mode • Avalanche rated

文件：129.06 Kbytes 页数：9 Pages

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西门子

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -22A@ TC=25℃ ·Drain Source Voltage : VDSS= -50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor driv

文件：325.56 Kbytes 页数：2 Pages

ISC

无锡固电

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -15A@ TC=25℃ ·Drain Source Voltage : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor driv

文件：326.16 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

文件：202.31 Kbytes 页数：9 Pages

SIEMENS

西门子

main ratings

Infineon

英飞凌

SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

Infineon

英飞凌

SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

Infineon

英飞凌