零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
BUL45 | Silicon NPN Power Transistors DESCRIPTION ·WithTO-220Cpackage ·Fastswitchingspeed ·Highvoltage APPLICATIONS ·DesignedforuseinelectronicballastandInswitchmodepowersupplies | SAVANTIC Savantic, Inc. | ||
BUL45 | Silicon NPN Power Transistors DESCRIPTION ·WithTO-220Cpackage ·Fastswitchingspeed ·Highvoltage APPLICATIONS ·DesignedforuseinelectronicballastandInswitchmodepowersupplies | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
BUL45 | POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS NPNSiliconPowerTransistor HighVoltageSWITCHMODE™Series Designedforuseinelectronicballast(lightballast)andinSwitchmodePowersuppliesupto50Watts.Mainfeaturesinclude: •ImprovedEfficiencyDueto: —LowBaseDriveRequirements(HighandFlatDCCurrentGain | MotorolaMotorola, Inc 摩托罗拉 | ||
BUL45 | POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS NPNSiliconPowerTransistorHighVoltageSWITCHMODESeries Designedforuseinelectronicballast(lightballast)andinSWITCHMODEPowersuppliesupto50W. Features •ImprovedEfficiencyDueto: ♦LowBaseDriveRequirements(HighandFlatDCCurrentGainhFE) ♦LowPowerLosses( | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
BUL45 | NPN Silicon Power Transistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
BUL45 | Silicon NPN Power Transistors | SAVANTIC Savantic, Inc. | ||
BUL45 | 包装:散装 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 400V 5A TO220 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS TheBUD45D2isstate–of–artHighSpeedHighgainBIPolartransistor(H2BIP).Highdynamiccharacteristicsandlottolotminimumspread(±150nsonstoragetime)makeitideallysuitableforlightballastapplications.Therefore,thereisnoneedtoguaranteeanhFEwindow. Mainfeatures: •Low | MotorolaMotorola, Inc 摩托罗拉 | |||
POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS HighSpeed,HighGainBipolarNPNPowerTransistorwithIntegratedCollector−EmitterDiodeandBuilt−inEfficientAntisaturationNetwork TheBUL45D2isstate–of–artHighSpeedHighgainBIPolartransistor(H2BIP).Highdynamiccharacteristicsandlottolotminimumspread(±150nsonstoragetime | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
High Speed, High Gain Bipolar NPN Power Transistor HighSpeed,HighGainBipolarNPNPowerTransistor withIntegratedCollector−EmitterDiodeandBuilt−inEfficientAntisaturationNetwork TheBUL45D2Gisstate−of−artHighSpeedHighgainBiPolartransistor(H2BIP).Highdynamiccharacteristicsandlot−to−lotminimumspread(±150nsonstorageti | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS NPNSiliconPowerTransistor HighVoltageSWITCHMODE™Series Designedforuseinelectronicballast(lightballast)andinSwitchmodePowersuppliesupto50Watts.Mainfeaturesinclude: •ImprovedEfficiencyDueto: —LowBaseDriveRequirements(HighandFlatDCCurrentGain | MotorolaMotorola, Inc 摩托罗拉 | |||
POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS NPNSiliconPowerTransistorHighVoltageSWITCHMODESeries Designedforuseinelectronicballast(lightballast)andinSWITCHMODEPowersuppliesupto50W. Features •ImprovedEfficiencyDueto: ♦LowBaseDriveRequirements(HighandFlatDCCurrentGainhFE) ♦LowPowerLosses( | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPN Silicon Power Transistor NPNSiliconPowerTransistorHighVoltageSWITCHMODESeries Designedforuseinelectronicballast(lightballast)andinSWITCHMODEPowersuppliesupto50W. Features •ImprovedEfficiencyDueto: ♦LowBaseDriveRequirements(HighandFlatDCCurrentGainhFE) ♦LowPowerLosses( | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPN Silicon Power Transistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
High Speed, High Gain Bipolar NPN Power Transistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
High Speed, High Gain Bipolar NPN Power Transistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
High Speed, High Gain Bipolar NPN Power Transistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPN Silicon Power Transistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
包装:管件 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 400V 5A TO220 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
包装:管件 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 400V 5A TO220 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-NPN
- 性质:
开关管 (S)_功率放大 (L)
- 封装形式:
直插封装
- 极限工作电压:
400V
- 最大电流允许值:
5A
- 最大工作频率:
20MHZ
- 引脚数:
3
- 可代换的型号:
- 最大耗散功率:
70W
- 放大倍数:
- 图片代号:
B-10
- vtest:
400
- htest:
20000000
- atest:
5
- wtest:
70
产品属性
- 产品编号:
BUL45
- 制造商:
onsemi
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 系列:
SWITCHMODE™
- 包装:
散装
- 晶体管类型:
NPN
- 不同 Ib、Ic 时 Vce 饱和压降(最大值):
400mV @ 400mA,2A
- 电流 - 集电极截止(最大值):
100µA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):
14 @ 300mA,5V
- 频率 - 跃迁:
12MHz
- 工作温度:
-65°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-220-3
- 供应商器件封装:
TO-220
- 描述:
TRANS NPN 400V 5A TO220
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MOT |
2017+ |
TO-220 |
65895 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
MOT |
1541 |
询价 | |||||
ST |
17+ |
TO-220 |
626 |
原装现货热卖 |
询价 | ||
ST |
17+ |
TO-220 |
6200 |
询价 | |||
MOT |
23+ |
NA |
5000 |
全新原装假一赔十 |
询价 | ||
ON |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
ST |
23+ |
TO-220 |
20000 |
专做原装正品,假一罚百! |
询价 | ||
23+ |
N/A |
85100 |
正品授权货源可靠 |
询价 | |||
ST |
1746+ |
TO220 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
MOTOROLA |
2020+ |
. |
5243 |
全新原装现货库存,超低价清仓! |
询价 |