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BUL45

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-220Cpackage ·Fastswitchingspeed ·Highvoltage APPLICATIONS ·DesignedforuseinelectronicballastandInswitchmodepowersupplies

SAVANTIC

Savantic, Inc.

SAVANTIC

BUL45

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-220Cpackage ·Fastswitchingspeed ·Highvoltage APPLICATIONS ·DesignedforuseinelectronicballastandInswitchmodepowersupplies

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

BUL45

POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

NPNSiliconPowerTransistor HighVoltageSWITCHMODE™Series Designedforuseinelectronicballast(lightballast)andinSwitchmodePowersuppliesupto50Watts.Mainfeaturesinclude: •ImprovedEfficiencyDueto: —LowBaseDriveRequirements(HighandFlatDCCurrentGain

MotorolaMotorola, Inc

摩托罗拉

Motorola

BUL45

POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

NPNSiliconPowerTransistorHighVoltageSWITCHMODESeries Designedforuseinelectronicballast(lightballast)andinSWITCHMODEPowersuppliesupto50W. Features •ImprovedEfficiencyDueto: ♦LowBaseDriveRequirements(HighandFlatDCCurrentGainhFE) ♦LowPowerLosses(

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BUL45

NPN Silicon Power Transistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BUL45

Silicon NPN Power Transistors

SAVANTIC

Savantic, Inc.

SAVANTIC

BUL45

包装:散装 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 400V 5A TO220

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BUL45D2

POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS

TheBUD45D2isstate–of–artHighSpeedHighgainBIPolartransistor(H2BIP).Highdynamiccharacteristicsandlottolotminimumspread(±150nsonstoragetime)makeitideallysuitableforlightballastapplications.Therefore,thereisnoneedtoguaranteeanhFEwindow. Mainfeatures: •Low

MotorolaMotorola, Inc

摩托罗拉

Motorola

BUL45D2

POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS

HighSpeed,HighGainBipolarNPNPowerTransistorwithIntegratedCollector−EmitterDiodeandBuilt−inEfficientAntisaturationNetwork TheBUL45D2isstate–of–artHighSpeedHighgainBIPolartransistor(H2BIP).Highdynamiccharacteristicsandlottolotminimumspread(±150nsonstoragetime

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BUL45D2G

High Speed, High Gain Bipolar NPN Power Transistor

HighSpeed,HighGainBipolarNPNPowerTransistor withIntegratedCollector−EmitterDiodeandBuilt−inEfficientAntisaturationNetwork TheBUL45D2Gisstate−of−artHighSpeedHighgainBiPolartransistor(H2BIP).Highdynamiccharacteristicsandlot−to−lotminimumspread(±150nsonstorageti

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BUL45F

POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

NPNSiliconPowerTransistor HighVoltageSWITCHMODE™Series Designedforuseinelectronicballast(lightballast)andinSwitchmodePowersuppliesupto50Watts.Mainfeaturesinclude: •ImprovedEfficiencyDueto: —LowBaseDriveRequirements(HighandFlatDCCurrentGain

MotorolaMotorola, Inc

摩托罗拉

Motorola

BUL45F

POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

NPNSiliconPowerTransistorHighVoltageSWITCHMODESeries Designedforuseinelectronicballast(lightballast)andinSWITCHMODEPowersuppliesupto50W. Features •ImprovedEfficiencyDueto: ♦LowBaseDriveRequirements(HighandFlatDCCurrentGainhFE) ♦LowPowerLosses(

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BUL45G

NPN Silicon Power Transistor

NPNSiliconPowerTransistorHighVoltageSWITCHMODESeries Designedforuseinelectronicballast(lightballast)andinSWITCHMODEPowersuppliesupto50W. Features •ImprovedEfficiencyDueto: ♦LowBaseDriveRequirements(HighandFlatDCCurrentGainhFE) ♦LowPowerLosses(

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BUL45_06

NPN Silicon Power Transistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BUL45D2

High Speed, High Gain Bipolar NPN Power Transistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BUL45D2_14

High Speed, High Gain Bipolar NPN Power Transistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BUL45D2G

High Speed, High Gain Bipolar NPN Power Transistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BUL45G

NPN Silicon Power Transistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BUL45D2G

包装:管件 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 400V 5A TO220

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BUL45G

包装:管件 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 400V 5A TO220

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

晶体管资料

  • 型号:

    BUL45

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    开关管 (S)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    400V

  • 最大电流允许值:

    5A

  • 最大工作频率:

    20MHZ

  • 引脚数:

    3

  • 可代换的型号:

  • 最大耗散功率:

    70W

  • 放大倍数:

  • 图片代号:

    B-10

  • vtest:

    400

  • htest:

    20000000

  • atest:

    5

  • wtest:

    70

产品属性

  • 产品编号:

    BUL45

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 系列:

    SWITCHMODE™

  • 包装:

    散装

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    400mV @ 400mA,2A

  • 电流 - 集电极截止(最大值):

    100µA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    14 @ 300mA,5V

  • 频率 - 跃迁:

    12MHz

  • 工作温度:

    -65°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220

  • 描述:

    TRANS NPN 400V 5A TO220

供应商 型号 品牌 批号 封装 库存 备注 价格
MOT
2017+
TO-220
65895
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
MOT
1541
询价
ST
17+
TO-220
626
原装现货热卖
询价
ST
17+
TO-220
6200
询价
MOT
23+
NA
5000
全新原装假一赔十
询价
ON
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
ST
23+
TO-220
20000
专做原装正品,假一罚百!
询价
23+
N/A
85100
正品授权货源可靠
询价
ST
1746+
TO220
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
MOTOROLA
2020+
.
5243
全新原装现货库存,超低价清仓!
询价
更多BUL45供应商 更新时间2024-3-29 16:44:00