采用 SOT-23-3 封装的适用于工业和消费应用的 N 沟道增强模式小信号晶体管

\n优势:\n• 节省 PCB 空间和成本\n• 灵活的栅极驱动\n• 降低设计复杂性\n• 环保型产品\n• 综合效率高\n• 可实现稳健的设计\n• 工业级资质;

Infineon

英飞凌

丝印：IIs；Package：PG-SOT23；Small-Signal Transistor

文件：1.56321 Mbytes 页数：10 Pages

INFINEON

英飞凌

Complementary Darlington Power Transistors

Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127

文件：284.04 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Germanium PNP Transistor Horizontal Output Amplifier

Germanium PNP Transistor Horizontal Output Amplifier

文件：21.1 Kbytes 页数：2 Pages

NTE

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

文件：251.64 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉