丝印：-K3；Package：SOT-23；N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: BSH111 in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Low threshold voltage ■ Subminiature surface mount package. Applications ■ Batte

文件：115.78 Kbytes 页数：13 Pages

PHI

PHI

丝印：4T；Package：TO-236AB；55 V, N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic

文件：742.71 Kbytes 页数：16 Pages

NEXPERIA

安世

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH112 in SOT23. 2. Features n TrenchMOS™ technology n Very fast switching n Logic level compatible n Subminiature surface mount package n Gate-sourc

文件：391.21 Kbytes 页数：14 Pages

NEXPERIA

安世

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package ■ Gate-source ESD protection diodes. c c Applications ■

文件：290.23 Kbytes 页数：13 Pages

PHI

PHI

N-channel enhancement mode field effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ TrenchMOS™ technology ■ Low on-state resistance ■ Very fast switching ■ Surface mount package. Applications ■ Relay driver ■ DC to DC converter ■ General purpose s

文件：287.27 Kbytes 页数：13 Pages

PHI

PHI

N-channel enhancement mode field effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH114 in SOT23. 2. Features n TrenchMOS™ technology n Low on-state resistance n Very fast switching n Surface mount package. 3. Applications n Rela

文件：388.49 Kbytes 页数：14 Pages

NEXPERIA

安世

N-Channel 100 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested • Material categorization: APPLICATIONS • DC/DC Converters • Load Switch • LED Backlighting in LCD TVs

文件：1.91664 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH121 in SOT323. 2. Features n TrenchMOS™ technology n Very fast switching n Low threshold voltage n Subminiature surface mount package. 3. Applicat

文件：397.48 Kbytes 页数：14 Pages

NEXPERIA

安世

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH121 in SOT323. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Low threshold voltage ■ Subminiature surface mount package. Applications ■

文件：297.38 Kbytes 页数：13 Pages

PHI

PHI

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. FEATURES • Low threshold voltage • Fast switching

文件：150.87 Kbytes 页数：7 Pages

PHI

PHI