P-channel enhancement mode MOS transistor

FEATURES • Low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ide

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安世

P-channel enhancement mode MOS transistor

FEATURES • Low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ide

文件：229.59 Kbytes 页数：8 Pages

NEXPERIA

安世

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. FEATURES • Low threshold voltage • Fast switching

文件：138.93 Kbytes 页数：7 Pages

PHI

PHI

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

文件：149.08 Kbytes 页数：7 Pages

PHI

PHI

P-CHANNEL ENHANCEMENT MODE MOSFET

Application » Interfacing Switching « Portable equipment and battery Load Switch

文件：2.37435 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

P-channel enhancement mode MOS transistor

FEATURES • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making i

文件：236.36 Kbytes 页数：8 Pages

NEXPERIA

安世

P-channel enhancement mode MOS transistor

FEATURES • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making i

文件：231.88 Kbytes 页数：8 Pages

NEXPERIA

安世

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. FEATURES • Very low threshold voltage • Fast swit

文件：143.56 Kbytes 页数：7 Pages

PHI

PHI

丝印：KB；Package：TO-236AB；20 V, P-channel Trench MOSFET

General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Low threshold voltage • Low on-state resistance • Trench MOSFET technology • Enhanced

文件：743.25 Kbytes 页数：16 Pages

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安世

丝印：Q8；Package：SOT23；20 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Extended temperature range Tj = 175 °C • Trench MOSFET

文件：277.15 Kbytes 页数：15 Pages

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