N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID = 1.05 A (VGS = 10V) ● RDS(ON)

文件：1.54676 Mbytes 页数：5 Pages

KEXIN

科信电子

N-channel enhancement mode MOS transistor

FEATURES • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package GENERAL DESCRIPTION N-channel, enhancement mode, logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching mak

文件：229.87 Kbytes 页数：8 Pages

NEXPERIA

安世

N-channel enhancement mode

GENERAL DESCRIPTION N-channel, enhancement mode, logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH105 is supplied in the SOT23 subminiatu

文件：40.22 Kbytes 页数：2 Pages

TYSEMI

台湾TY半导体

N-channel enhancement mode MOS transistor

GENERAL DESCRIPTION N-channel, enhancement mode, logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH106 is supplied in the SOT363 subminiat

文件：146.34 Kbytes 页数：7 Pages

PHI

飞利浦

N-channel enhancement mode MOS transistor

GENERAL DESCRIPTION N-channel, enhancement mode, logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH107 is supplied in the SOT457 subminiat

文件：152.82 Kbytes 页数：7 Pages

PHI

飞利浦

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH108 in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package. Applications ■

文件：265.23 Kbytes 页数：2 Pages

ZPSEMIZP Semiconductor

至尚臻品

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package. Applications ■ Battery management ■ High speed switch ■

文件：318.39 Kbytes 页数：13 Pages

PHI

飞利浦

丝印：A29T；Package：SOT23；N-Channel Enhancement Mode MOSFET

Features Vbs = 30V,Ip = 3A Rosion)

文件：2.30114 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package. Applications ■ Battery management ■ High speed switch ■

文件：206.38 Kbytes 页数：2 Pages

TYSEMI

台湾TY半导体

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH108 in SOT23. 2. Features n TrenchMOS™ technology n Very fast switching n Logic level compatible n Subminiature surface mount package. 3. Applicat

文件：418.83 Kbytes 页数：14 Pages

NEXPERIA

安世