Tooling Selection Guide for PANDUIT Terminals, Splices, and Disconnects

文件：82.58 Kbytes 页数：5 Pages

PANDUIT

N-channel enhancement mode MOS transistor

DESCRIPTION N-channel enhancement mode MOS transistor in a SOT23 SMD package. FEATURES • Very low threshold • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL etc. APPLICATIONS • Power management • DC to DC converters • Battery powered applications • Glue-l

文件：643.33 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel enhancement mode MOS transistor

DESCRIPTION N-channel enhancement mode MOS transistor in a SOT2 SMD package. FEATURES • Very low threshold • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL etc. APPLICATIONS • Power management • DC to DC converters • Battery powered applications • ‘Glue-l

文件：96.86 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel enhancement mode MOS transistor

DESCRIPTION N-channel enhancement mode MOS transistor in a SOT23 SMD package. FEATURES • Very low threshold • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL etc. APPLICATIONS • Power management • DC to DC converters • Battery powered applications • ‘Glue-

文件：96.52 Kbytes 页数：12 Pages

PHI

飞利浦

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：1.85593 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-channel enhancement mode MOS transistor

FEATURES · Very low threshold · High-speed switching · No secondary breakdown · Direct interface to C-MOS, TTL etc. APPLICATIONS · Power management · DC to DC converters · Battery powered applications · ‘Glue-logic’; interface between logic blocks and/or periphery · General purpose swit

文件：197.85 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：UQ；Package：SOT23；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Dis

文件：288.26 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel enhancement mode MOS transistor

DESCRIPTION N-channel enhancement mode MOS transistor in a SOT23 SMD package. FEATURES • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL, etc. • Very low threshold. APPLICATIONS • ‘Glue-logic’: interface between logic blocks and/or periphery • Power manageme

文件：51.34 Kbytes 页数：8 Pages

PHI

飞利浦

N-channel enhancement mode MOS transistor

GENERAL DESCRIPTION N-channel, enhancement mode, logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH105 is supplied in the SOT23 subminiatu

文件：145.63 Kbytes 页数：7 Pages

PHI

飞利浦

N-channel enhancement mode

GENERAL DESCRIPTION N-channel, enhancement mode, logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH105 is supplied in the SOT23 subminiatu

文件：96.17 Kbytes 页数：2 Pages

ZPSEMIZP Semiconductor

至尚臻品