丝印：WT1X；Package：SOT-23；P-Channel Mosfet

PWM applications Load switch Power management

文件：1.51392 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. FEATURES • Very low threshold voltage • Fast swit

文件：144.4 Kbytes 页数：7 Pages

PHI

PHI

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. FEATURES • Very low threshold voltage • Fast swit

文件：155.47 Kbytes 页数：7 Pages

PHI

PHI

P-channel enhancement mode MOS transistor

DESCRIPTION P-channel enhancement mode MOS transistor in a SOT363 SMD package. FEATURES • Low threshold voltage • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL, etc. APPLICATIONS • Power management • Battery powered applications e.g. cellular phones • Gen

文件：93.63 Kbytes 页数：12 Pages

PHI

PHI

Dual N-channel enhancement mode MOS transistor

DESCRIPTION Two N-channel enhancement mode MOS transistors in an 8-pin plastic TSSOP8 package. FEATURES • 40 mΩ on-state resistance at 2.5 V gate drive • RDSon rating down to 1.8 V • ESD gate protection. APPLICATIONS • Li-Ion safety switch • Power management.

文件：36.17 Kbytes 页数：5 Pages

PHI

PHI

BASIC BLADE & BEAM HEADER

文件：243.21 Kbytes 页数：1 Pages

SAMTEC

美国申泰

BASIC BLADE & BEAM SOCKET

文件：866.42 Kbytes 页数：1 Pages

SAMTEC

美国申泰

55 V, N-channel Trench MOSFET

文件：289.04 Kbytes 页数：16 Pages

PHI

PHI

N-channel enhancement mode field effect transistor

文件：310.41 Kbytes 页数：13 Pages

恩XP

N-channel enhancement mode field effect transistor

文件：310.41 Kbytes 页数：13 Pages

恩XP