丝印：05N03LS5；Package：PG-TDSON-8FL；OptiMOSTM 5 Power-Transistor, 30 V

Features • Very low on-resistance Rusian 0 V6s=4,5 V • Ootimized charges for fast switching • Optimized QGD/QGS for induced turn on ruggedness • Superior thermal resistance « Nuchannel • 100 avalanche tested • Po-free lead plating; RoHS compliant • Halogen-free acoording to IEC61249-2-24

文件：2.16371 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：05N03LS5；Package：TDSON-8FL；MOSFET OptiMOSTM 5 Power-Transistor, 30 V

Features • Very low on-resistance RDS(on) @ VGS=4.5 V • Optimized charges for fast switching • Optimized QGD/QGS for induced turn on ruggedness • Superior thermal resistance • N-channel • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-

文件：1.48295 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：05N03LS5；Package：TDSON-8FL；OptiMOSTM5Power-Transistor,30V

Features •Verylowon-resistanceRDS(on)@VGS=4.5V •Optimizedchargesforfastswitching •OptimizedQGD/QGSforinducedturnonruggedness •Superiorthermalresistance •N-channel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.48296 Mbytes 页数：12 Pages

Infineon

英飞凌

MOSFET OptiMOSTM 5 Power-Transistor, 30 V

Features • Very low on-resistance RDS(on) @ VGS=4.5 V • Optimized charges for fast switching • Optimized QGD/QGS for induced turn on ruggedness • Superior thermal resistance • N-channel • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-

文件：1.48295 Mbytes 页数：12 Pages

Infineon

英飞凌

MOSFET OptiMOSTM 5 Power-Transistor, 30 V

Features • Very low on-resistance RDS(on) @ VGS=4.5 V • Optimized charges for fast switching • Optimized QGD/QGS for induced turn on ruggedness • Superior thermal resistance • N-channel • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-

文件：1.48295 Mbytes 页数：12 Pages

Infineon

英飞凌

OptiMOSTM5Power-Transistor,30V

Features •Verylowon-resistanceRDS(on)@VGS=4.5V •Optimizedchargesforfastswitching •OptimizedQGD/QGSforinducedturnonruggedness •Superiorthermalresistance •N-channel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.48296 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：007N04SC；Package：PG-WSON-8；OptiMOSTM 6 Power-Transistor, 40 V

Features • Dual-side cooled package with lowest junction-top thermal resistance • Optimized for synchronous application • Very low on-resistance RDS(on) • 100 avalanche tested • Superior thermal resistance • N-channel • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61

文件：1.07647 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：009N04SC；Package：PG-WSON-8；OptiMOSTM Power-MOSFET, 40 V

Features • Dual-side cooled package with lowest junction-top thermal resistance • Optimized for sychronous rectification • 175 °C rated • Very low on-resistance RDS(on) • 100 avalanche tested • Superior thermal resistance • N-channel, logic level • Pb-free lead plating; RoHS compliant • H

文件：1.06958 Mbytes 页数：11 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current--ID=100A@ TC=25℃ ·Drain Source Voltage--VDSS= 25V(Min) APPLICATIONS ·Synchronous Rectification in SMPS ·UPS ·Motor Control

文件：325.93 Kbytes 页数：3 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=100A@ TC=25℃ ·Drain Source Voltage- VDSS= 80V(Min) APPLICATIONS ·Synchronous Rectification in SMPS ·Switching converters,motor driver,relay driver ·Power Tools ·UPS ·Motor Control

文件：381.48 Kbytes 页数：3 Pages

ISC

无锡固电