BSC005N03LS5

OptiMOSTM 5 Power-Transistor, 30 V

Features •Verylowon-resistanceRusian0V6s=4,5V •Ootimizedchargesforfastswitching •OptimizedQGD/QGSforinducedturnonruggedness •Superiorthermalresistance «Nuchannel •100avalanchetested •Po-freeleadplating;RoHScompliant •Halogen-freeacoordingtoIEC61249-2-24

BSC007N04LS6SC

OptiMOSTM 6 Power-Transistor, 40 V

Features •Dual-sidecooledpackagewithlowestjunction-topthermalresistance •Optimizedforsynchronousapplication •Verylowon-resistanceRDS(on) •100avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61

BSC009N04LSSC

OptiMOSTM Power-MOSFET, 40 V

Features •Dual-sidecooledpackagewithlowestjunction-topthermalresistance •Optimizedforsychronousrectification •175°Crated •Verylowon-resistanceRDS(on) •100avalanchetested •Superiorthermalresistance •N-channel,logiclevel •Pb-freeleadplating;RoHScompliant •H

BSC009NE2LS5I

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainCurrent--ID=100A@TC=25℃ ·DrainSourceVoltage--VDSS=25V(Min) APPLICATIONS ·SynchronousRectificationinSMPS ·UPS ·MotorControl

BSC010NE2LS

OptiMOSTM Power-MOSFET

Features •OptimizedforhighperformanceBuckconverter •Verylowon-resistanceRDS(on)@VGS=4.5V •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccording

BSC010NE2LS

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) APPLICATIONS ·SynchronousRectificationinSMPS ·Switchingconverters,motordriver,relaydriver ·PowerTools ·UPS ·MotorControl

BSC010NE2LS_13

OptiMOSTM Power-MOSFET

Features •OptimizedforhighperformanceBuckconverter •Verylowon-resistanceRDS(on)@VGS=4.5V •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccording

BSC012N06NS

OptiMOSTM5 Power-Transistor, 60 V

Features •Optimizedforsynchronousrectification •100avalanchetested •Superiorthermalresistance •N-channel •175°Crated •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection

BSC014N03LS

OptiMOS?? Power-MOSFET

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •Avala

BSC014N03LSG

OptiMOS?? Power-MOSFET

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •Avala

BSC014N04LS

OptiMOSTM Power-MOSFET, 40 V

Features •Optimizedforsynchronousrectification •Verylowon-stateresistanceRDS(on) •100avalanchetested •Superiorthermalresistance •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjoin

BSC014N04LS_16

OptiMOSTM Power-MOSFET, 40 V

Features •Optimizedforsynchronousrectification •Verylowon-stateresistanceRDS(on) •100avalanchetested •Superiorthermalresistance •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjoin

BSC016N03LSG

OptiMOS?? Power-MOSFET

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •Avala

BSC016N06NSSC

OptiMOSTM Power-MOSFET, 60 V

Features •Doublesidecooledpackage-withlowestJuntion-topthermalresistance •175°Crated •Optimizedforsynchronousrectification •100avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •High

BSC020N03LSG

OptiMOS?? Power-MOSFET

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel;Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •Avalanc

BSC020N03MSG

OptiMOS?? M-Series Power-MOSFET

Features •Optimizedfor5Vdriverapplication(Notebook,VGA,POL) •LowFOMSWforHighFrequencySMPS •100Avalanchetested •N-channel •Verylowon-resistanceRDS(on)@VGS=4.5V •ExcellentgatechargexRDS(on)product(FOM) •QualifiedaccordingtoJEDEC1)fortargetapplications

BSC022N03

OptiMOS2 Power-Transistor

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyfornotebookDC/DCconverters •QualifiedaccordingtoJEDEC1fortargetapplications •N-channel •Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance

BSC022N03S

OptiMOS2 Power-Transistor

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyfornotebookDC/DCconverters •QualifiedaccordingtoJEDEC1fortargetapplications •N-channel •Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance

BSC022N03SG

OptiMOS?? Power-Transistor

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyfornotebookDC/DCconverters •QualifiedaccordingtoJEDEC1fortargetapplications •Logiclevel/N-channel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance

BSC023N08NS5SC

OptiMOSTM 5 Power-Transistor, 80 V

Features •Dual-sidecooledpackagewithlowestJunction-topthermalresistance •Optimizedforsynchronousrectificationinserveranddesktop •100avalanchetested •Superiorthermalresistance •N-channel •175°Crated •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingto