丝印：007N04SC；Package：PG-WSON-8；OptiMOSTM 6 Power-Transistor, 40 V

Features • Dual-side cooled package with lowest junction-top thermal resistance • Optimized for synchronous application • Very low on-resistance RDS(on) • 100 avalanche tested • Superior thermal resistance • N-channel • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61

文件：1.07647 Mbytes 页数：11 Pages

INFINEON

英飞凌

OptiMOS ™ 6 个 40 V 功率 MOSFET，采用 SuperSO8 DSC 封装，具有双面冷却功能，可增强热性能

\n优势:\n• Lower conduction losses and switching losses for higher system efficiency\n• Improved heat dissipation for high power density and improved reliability\n• Superior power handling capability and ruggedness for longer lifetime\n• Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in,;

Infineon

英飞凌

OptiMOSTM 6 Power-Transistor, 40 V

文件：1.45348 Mbytes 页数：12 Pages

INFINEON

英飞凌

PG-TDSON-8

INFINEON

英飞凌

上传：深圳市壹芯创科技有限公司

TDSON8

INFINEON/英飞凌

上传：深圳市向鸿伟业电子有限公司