丝印：05N03LS5；Package：PG-TDSON-8FL；OptiMOSTM 5 Power-Transistor, 30 V

Features • Very low on-resistance Rusian 0 V6s=4,5 V • Ootimized charges for fast switching • Optimized QGD/QGS for induced turn on ruggedness • Superior thermal resistance « Nuchannel • 100 avalanche tested • Po-free lead plating; RoHS compliant • Halogen-free acoording to IEC61249-2-24

文件：2.16371 Mbytes 页数：12 Pages

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英飞凌

丝印：05N03LS5；Package：TDSON-8FL；MOSFET OptiMOSTM 5 Power-Transistor, 30 V

Features • Very low on-resistance RDS(on) @ VGS=4.5 V • Optimized charges for fast switching • Optimized QGD/QGS for induced turn on ruggedness • Superior thermal resistance • N-channel • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-

文件：1.48295 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：05N03LS5；Package：TDSON-8FL；OptiMOSTM5Power-Transistor,30V

Features •Verylowon-resistanceRDS(on)@VGS=4.5V •Optimizedchargesforfastswitching •OptimizedQGD/QGSforinducedturnonruggedness •Superiorthermalresistance •N-channel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.48296 Mbytes 页数：12 Pages

Infineon

英飞凌

OptiMOS ™低压功率MOSFET 30V

\n优势:\n• Highest efficiency\n• Highest power density in SuperSO8 package\n• Reduction of overall system costs;

Infineon

英飞凌

MOSFET OptiMOSTM 5 Power-Transistor, 30 V

Features • Very low on-resistance RDS(on) @ VGS=4.5 V • Optimized charges for fast switching • Optimized QGD/QGS for induced turn on ruggedness • Superior thermal resistance • N-channel • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-

文件：1.48295 Mbytes 页数：12 Pages

Infineon

英飞凌

MOSFET OptiMOSTM 5 Power-Transistor, 30 V

Features • Very low on-resistance RDS(on) @ VGS=4.5 V • Optimized charges for fast switching • Optimized QGD/QGS for induced turn on ruggedness • Superior thermal resistance • N-channel • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-

文件：1.48295 Mbytes 页数：12 Pages

Infineon

英飞凌

OptiMOSTM5Power-Transistor,30V

Features •Verylowon-resistanceRDS(on)@VGS=4.5V •Optimizedchargesforfastswitching •OptimizedQGD/QGSforinducedturnonruggedness •Superiorthermalresistance •N-channel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.48296 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N03LS5I；Package：TDSON-8FL；OptiMOSTM 5 Power-Transistor, 30 V

文件：1.48714 Mbytes 页数：12 Pages

Infineon

英飞凌

OptiMOS ™低压功率MOSFET 30V

\n优势:\n• Highest efficiency\n• Highest power density in SuperSO8 package\n• Reduction of overall system costs;

Infineon

英飞凌