OptiMOS ™ 5 功率 MOSFET 40 V，采用 SuperSO8 DSC 封装，具有双面冷却功能，可增强热性能

\n优势:\n• Lower conduction losses and switching losses for higher system efficiency\n• Improved heat dissipation for high power density and improved reliability\n• Superior power handling capability and ruggedness for longer lifetime\n• Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in,;

Infineon

英飞凌

丝印：009N04SC；Package：PG-WSON-8；OptiMOSTM Power-MOSFET, 40 V

Features • Dual-side cooled package with lowest junction-top thermal resistance • Optimized for sychronous rectification • 175 °C rated • Very low on-resistance RDS(on) • 100 avalanche tested • Superior thermal resistance • N-channel, logic level • Pb-free lead plating; RoHS compliant • H

文件：1.06958 Mbytes 页数：11 Pages

INFINEON

英飞凌

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：TRENCH \u003c= 40V

INFINEON

英飞凌

N-Channel Enhancement Mode Power MOSFET

Description The GT009N04TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：838.51 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT009N04TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.19733 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

40V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ M

文件：987.64 Kbytes 页数：6 Pages

HUNTECK

恒泰柯半导体