丝印：GT009N04A；Package：TOLL；40V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ M

文件：987.64 Kbytes 页数：6 Pages

HUNTECK

恒泰柯半导体

OptiMOSTM Power-MOSFET, 40 V

Features • Dual-side cooled package with lowest junction-top thermal resistance • Optimized for sychronous rectification • 175 °C rated • Very low on-resistance RDS(on) • 100 avalanche tested • Superior thermal resistance • N-channel, logic level • Pb-free lead plating; RoHS compliant • H

文件：1.06958 Mbytes 页数：11 Pages

INFINEON

英飞凌

N-Channel Enhancement Mode Power MOSFET

Description The GT009N04TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：838.51 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT009N04TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.19733 Mbytes 页数：6 Pages

GOFORD

谷峰半导体