丝印：GT009N04；Package：TOLL；N-Channel Enhancement Mode Power MOSFET

Description The GT009N04TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：838.51 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT009N04A；Package：TOLL；N-Channel Enhancement Mode Power MOSFET

Description The GT009N04TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.19733 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

40V N Channel SGT MOSFET

GOFORD

谷峰半导体

40V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ M

文件：987.64 Kbytes 页数：6 Pages

HUNTECK

恒泰柯半导体