型号：2SB1124；Package：SOT-89；PNP Epitaxial Planar Silicon Transistors

Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Fast switching speed. • Large current capacity and wide ASO.

文件：376.15 Kbytes 页数：2 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

型号：4.0SMF13A；Package：SOD-123；3.3 To 48V 400W Surface Mount Transient Voltage Suppressors (TVS)

Features Glass passivated chip 400W peak pulse power capability with a 10/1000us waveform Repetitive rate (duty cycle):0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. Meet AEC-Q101 requirement

文件：3.27335 Mbytes 页数：6 Pages

优恩半导体

型号：6.0SMAJ13CA；Package：DO-214AC；5.0 To 200V 600W Surface Mount Transient Voltage Suppressors (TVS)

Glass passivated chip 600W peak pulse power capability with a 10/1000us waveform Repetitive rate (duty cycle):0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260°C/10s at terminals. RoHS compliant Features

文件：3.35089 Mbytes 页数：6 Pages

优恩半导体

型号：ACDBQC70-HF；Package：SOD-923F；SMD Schottky Barrier Diode

Features - Low reverse current. - Majority carrier conduction. - Extremely thin/leadless package. - Designed for mounting on small surface. - AEC-Q101 Qualified.

文件：474.56 Kbytes 页数：4 Pages

典琦

型号：ACDBUC70-HF；Package：SOD-523F；SMD Schottky Barrier Diode

Features - Low forward voltage. - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction. - AEC-Q101 Qualified & PPAP.

文件：472.97 Kbytes 页数：4 Pages

典琦

型号：AP2121AJ4-3.0TRG1；Package：CSP-4；HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Features · Low Dropout Voltage at IOUT=100mA: 150mV Typical (Except 1.2V, 1.3V and 1.5V Versions) · Low Standby Current: 0.1μA Typical · Low Quiescent Current: 25μA Typical · High Ripple Rejection: 70dB Typical （f=1kHz） · Output Current: More Than 200mA (300mA Limit) · Extremely Low Noise:

文件：1.19367 Mbytes 页数：29 Pages

美台半导体

型号：BC54-16PA；Package：SOT1061；45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 q

文件：252.29 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：BC54-16PA-Q；Package：SOT1061；45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified

文件：241.37 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：BCX55-10；Package：SC-62；60 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia JEITA NPN complement BCX55 BCX52 BCX55-10 BCX52-10 BCX55-16 SOT89 SC-62 BCX52-16 2. Features and benef

文件：241.45 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：BCX55-10；Package：SC-62；60 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.98381 Mbytes 页数：22 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司