型号：NTBG022N120M3S；Package：D2PAK-7L；MOSFET - Silicon Carbide (SiC), Single N-Channel, M3, D2PAK-7L 1200 V, 22 m, 58 A

Features • Typ. RDS(on) = 22 m • Low switching losses (Typ. EON 485 J at 40 A, 800 V) • 100 Avalanche Tested • These Devices are RoHS Compliant Typical Applications • Solar Inverters • Electric Vehicle Charging Stations • Uninterruptible Power Supplies (UPS) • Energy Storage Systems

文件：227.68 Kbytes 页数：9 Pages

安森美半导体

型号：NVBG022N120M3S；Package：D2PAK-7L；MOSFET - Silicon Carbide (SiC), Single N-Channel, M3, D2PAK-7L 1200 V, 22 m, 58 A

Features • Typ. RDS(on) = 22 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 148 nC) • High Speed Switching with Low Capacitance (Coss = 148 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • These Devices are RoHS Compliant Typical Applications • Automotive On Board C

文件：232.19 Kbytes 页数：9 Pages

安森美半导体

型号：NVBG022N120M3S；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – 22mohm, 1200V, M3, D2PAK-7L

Features • Typ. RDS(on) = 22 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 148 nC) • High Speed Switching with Low Capacitance (Coss = 148 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • These Devices are RoHS Compliant Typical Applications • Automotive On Board C

文件：305.09 Kbytes 页数：9 Pages

安森美半导体