丝印：EE；Package：SOT89；PNP Darlington transistor

1. General description PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BCV49 2. Features and benefits • Very high DC current gain (min. 10000) • High current (max. 500 mA) • Low voltage (max. 60 V) • AEC-Q101 qualified

文件：182.32 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：EG；Package：SOT89；NPN Darlington transistors

FEATURES • High current (max. 500 mA) • Low voltage (max. 60 V) • High DC current gain (min. 20000). APPLICATIONS • Preamplifier input applications. DESCRIPTION NPN small-signal Darlington transistor in a surface mount SOT89 plastic package. PNP complements: BCV28 and BCV48.

文件：123.63 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：EG；Package：SC-62；NPN Darlington transistors

FEATURES •High current (max. 500 mA) •Low voltage (max. 60 V) •High DC current gain (min. 20000). APPLICATIONS •Preamplifier input applications. DESCRIPTION NPN small-signal Darlington transistor in a surface mount SOT89 plastic package. PNP complements: BCV28 and BCV48.

文件：323.02 Kbytes 页数：9 Pages

NEXPERIA

安世

NPN Silicon Darlington Transistors (For general AF applications High collector current)

NPN Silicon Darlington Transistors ● For general AF applications ● High collector current ● High current gain ● Complementary types: BCV 28, BCV 48 (PNP)

文件：141.86 Kbytes 页数：4 Pages

SIEMENS

西门子

丝印：EG；Package：SOT-89；NPN Darlington transistors

DESCRIPTION NPN small-signal Darlington transistor in a surface mount SOT89 plastic package. PNP complements: BCV28 and BCV48. FEATURES • High current (max. 500 mA) • Low voltage (max. 60 V) • High DC current gain (min. 20000). APPLICATIONS • Preamplifier input applications.

文件：124.37 Kbytes 页数：8 Pages

恩XP

NPN SILICON PLANAR DARLINGTON TRANSISTOR

SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR COMPLEMENTARY TYPE – BCV48 PARTMARKING DETAILS – EG

文件：16.46 Kbytes 页数：1 Pages

Zetex

丝印：EG；Package：SOT-89；NPN Darlington transistors

DESCRIPTION NPN small-signal Darlington transistor in a surface mount SOT89 plastic package. PNP complements: BCV28 and BCV48. FEATURES • High current (max. 500 mA) • Low voltage (max. 60 V) • High DC current gain (min. 20000). APPLICATIONS • Preamplifier input applications.

文件：43.02 Kbytes 页数：8 Pages

PHI

飞利浦

NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors • For general AF applications • High collector current • High current gain • Complementary types: BCV28, BCV48 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

文件：47.8 Kbytes 页数：5 Pages

Infineon

英飞凌

SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR

Features • BVCEO > 60V • Darlington Transistor hFE > 10k @ 100mA for High Gain • IC = 500mA High Continuous Collector Current • Complementary Darlington PNP Type: FCX705 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Q

文件：26.9 Kbytes 页数：1 Pages

DIODES

美台半导体

NPN Silicon Double Transistor

NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBEmatching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

文件：49.31 Kbytes 页数：5 Pages

Infineon

英飞凌