NPN SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES * High VCEO * Low saturation voltage

文件：49.13 Kbytes 页数：1 Pages

ZETEX

SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES * High VCEO * Low saturation voltage

文件：253.31 Kbytes 页数：1 Pages

ZETEX

NPN Darlington transistors

DESCRIPTION NPN Darlington transistor in a SOT23 plastic package. PNP complements: BCV26 and BCV46. FEATURES • Medium current (max. 500 mA) • Low voltage (max. 60 V) • High DC current gain (min. 20000). APPLICATIONS • Preamplifier input applications.

文件：43.92 Kbytes 页数：8 Pages

PHI

PHI

NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors • For general AF applications • High collector current • High current gain • Complementary types: BCV26, BCV46 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

文件：49.5 Kbytes 页数：5 Pages

INFINEON

英飞凌

NPN SILICON DARLINGTON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BCV47 is a silicon NPN Darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. MARKING CODE: FG SERVICES • Bonded Inventory • Custom Electrical

文件：100.04 Kbytes 页数：2 Pages

CENTRAL

60V NPN DARLINGTON TRANSISTOR IN SOT23

Features • BVCEO > 60V • Darlington Transistor hFE > 10k @ 100mA for high gain • IC = 500mA high Continuous Collector Current • Complementary Darlington PNP Type: BCV46 • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qu

文件：221.02 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：FH；Package：SOT-23；NPN Darlington Transistors

NPN Darlington Transistors Features ● High Collector Current. ● High Current Gain.

文件：584.11 Kbytes 页数：3 Pages

PJSEMI

平晶半导体

60V NPN DARLINGTON TRANSISTOR IN SOT23

Features  BVCEO > 60V  Darlington Transistor hFE > 10k @ 100mA for High Gain  IC = 500mA High Continuous Collector Current  Complementary Darlington PNP Type: BCV46  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified

文件：453.89 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：FG；Package：SOT23；NPN Darlington transistor

1. General description NPN Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: BCV26 2. Features and benefits • Medium current of 500 mA • Low voltage of 60 V • High DC current gain of minimum 2000 • Qualified according to AEC-Q

文件：186.4 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：ZFG；Package：SOT23；60V NPN DARLINGTON TRANSISTOR IN SOT23

Features  BVCEO > 60V  Darlington Transistor hFE > 10k @ 100mA for High Gain  IC = 500mA High Continuous Collector Current  Complementary Darlington PNP Type: BCV46  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified

文件：453.89 Kbytes 页数：7 Pages

DIODES

美台半导体