PNP Darlington transistors

DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47. FEATURES • High current (max. 500 mA) • Low voltage (max. 60 V) • Very high DC current gain (min. 10000). APPLICATIONS • Where very high amplification is required.

文件：122.64 Kbytes 页数：7 Pages

恩XP

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23(TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：169.45 Kbytes 页数：2 Pages

Diotec

德欧泰克

SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES * Low saturation voltage COMPLEMENTARY TYPE – BCV26 - BCV27 BCV46 - BCV47 PARTMARKING DETAILS – BCV26 - ZFD BCV46 - ZFE

文件：51.22 Kbytes 页数：1 Pages

DIODES

美台半导体

60V PNP DARLINGTON TRANSISTOR IN SOT23

Features • BVCEO > -60V • Darlington Transistor hFE > 10k @ 100mA for high gain • IC = -500mA High Continuous Collector Current • Complementary Darlington PNP Type: BCV47 • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualifie

文件：216.23 Kbytes 页数：5 Pages

DIODES

美台半导体

PNP SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES * Low saturation voltage COMPLEMENTARY TYPE - BCV26 - BCV27 BCV46 - BCV47

文件：49.51 Kbytes 页数：1 Pages

Zetex

PNP Darlington transistors

DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47. FEATURES • High current (max. 500 mA) • Low voltage (max. 60 V) • Very high DC current gain (min. 10000). APPLICATIONS • Where very high amplification is required.

文件：43.89 Kbytes 页数：8 Pages

PHI

飞利浦

PNP Silicon Darlington Transistors

PNP Silicon Darlington Transistors • For general AF applications • High collector current • High current gain • Complementary types: BCV27, BCV47 (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

文件：49.55 Kbytes 页数：5 Pages

Infineon

英飞凌

丝印：FE；Package：SOT23；PNP Darlington transistor

1. General description PNP Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: BCV47-Q 2. Features and benefits • High current • High current gain • Qualified according to AEC-Q101 and recommended for use in automotive applicatio

文件：207.72 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：ZFE；Package：SOT23；60V PNP DARLINGTON TRANSISTOR IN SOT23

Features • BVCEO > -60V • Darlington Transistor hFE > 10k @ 100mA for high gain • IC = -500mA High Continuous Collector Current • Complementary Darlington PNP Type: BCV47 • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualifie

文件：216.23 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：ZFE；Package：SOT23；60V PNP DARLINGTON TRANSISTOR IN SOT23

Features • BVCEO > -60V • Darlington Transistor hFE > 10k @ 100mA for high gain • IC = -500mA High Continuous Collector Current • Complementary Darlington PNP Type: BCV47 • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualifie

文件：216.23 Kbytes 页数：5 Pages

DIODES

美台半导体