BCV46

PNP Darlington transistors

DESCRIPTION PNPDarlingtontransistorinaSOT23plasticpackage. NPNcomplements:BCV27andBCV47. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •VeryhighDCcurrentgain(min.10000). APPLICATIONS •Whereveryhighamplificationisrequired.

BCV46

PNP SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES *Lowsaturationvoltage COMPLEMENTARYTYPE-BCV26-BCV27 BCV46-BCV47

BCV46

PNP Silicon Darlington Transistors (For general AF applications High collector current)

PNPSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCV27,BCV47(NPN)

BCV46

Surface mount Si-Epitaxial PlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BCV46

PNP Silicon Darlington Transistors

PNPSiliconDarlingtonTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Complementarytypes:BCV27,BCV47(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

BCV46

PNP Darlington Transistors

PNPDarlingtonTransistors forpreamplifierinputapplications

BCV46

Marking：FE；Package：SOT23；PNP Darlington transistors

FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •VeryhighDCcurrentgain(min.10000). APPLICATIONS •Whereveryhighamplificationisrequired. DESCRIPTION PNPDarlingtontransistorinaSOT23plasticpackage.NPNcomplements:BCV27andBCV47.

BCV46

SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES *Lowsaturationvoltage COMPLEMENTARYTYPE–BCV26-BCV27 BCV46-BCV47 PARTMARKINGDETAILS–BCV26-ZFD BCV46-ZFE

BCV46

60V PNP DARLINGTON TRANSISTOR IN SOT23

Features •BVCEO>-60V •DarlingtonTransistorhFE>10k@100mAforhighgain •IC=-500mAHighContinuousCollectorCurrent •ComplementaryDarlingtonPNPType:BCV47 •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifie

BCV46

PNP Silicon Darlington Transistors