丝印：BCV；Package：QFN-16；12-Bit, Automotive Angle Sensor with ABZ & UVW Incremental Outputs

DESCRIPTION The MAQ430 detects the absolute angular position of a permanent magnet, typically a diametrically magnetized cylinder on a rotating shaft. Fast data acquisition and processing provide accurate angle measurement at speeds from 0 to 60,000 rpm. The MAQ430 supports a wide range of

文件：1.59035 Mbytes 页数：30 Pages

MPSIND

美国芯源

PNP Darlington Transistors

PNP Darlington Transistors for preamplifier input applications

文件：130.229 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

PNP Silicon Darlington Transistors (For general AF applications High collector current)

PNP Silicon Darlington Transistors ● For general AF applications ● High collector current ● High current gain ● Complementary types: BCV 27, BCV 47 (NPN)

文件：141.95 Kbytes 页数：4 Pages

SIEMENS

西门子

SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES * Low saturation voltage COMPLEMENTARY TYPE – BCV26 - BCV27 BCV46 - BCV47 PARTMARKING DETAILS – BCV26 - ZFD BCV46 - ZFE

文件：51.22 Kbytes 页数：1 Pages

DIODES

美台半导体

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23(TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：169.45 Kbytes 页数：2 Pages

Diotec

德欧泰克

PNP Darlington transistors

DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47. FEATURES • High current (max. 500 mA) • Low voltage (max. 60 V) • Very high DC current gain (min. 10000). APPLICATIONS • Where very high amplification is required.

文件：122.64 Kbytes 页数：7 Pages

恩XP

丝印：FD；Package：SOT23；PNP Darlington transistors

FEATURES •High current (max. 500 mA) •Low voltage (max. 60 V) •Very high DC current gain (min. 10000). APPLICATIONS •Where very high amplification is required. DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47.

文件：318.76 Kbytes 页数：8 Pages

NEXPERIA

安世

PNP SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES * Low saturation voltage COMPLEMENTARY TYPE - BCV26 - BCV27 BCV46 - BCV47

文件：49.51 Kbytes 页数：1 Pages

Zetex

PNP Darlington Transistor

PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.

文件：36.39 Kbytes 页数：4 Pages

Fairchild

仙童半导体

PNP Darlington Transistor

Description This device is designed for applications requiring extremely high current gain at collector currents to 800 mA. Sourced from Process 61.

文件：111.16 Kbytes 页数：5 Pages

ONSEMI

安森美半导体