丝印：3M；Package：SOT143B；PNP general-purpose double transistors

Features and benefits * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs * AEC-Q101 qualified * Small SMD plastic package

文件：801.55 Kbytes 页数：14 Pages

NEXPERIA

安世

NPN general-purpose double transistors

Features * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs

文件：2.29281 Mbytes 页数：13 Pages

NEXPERIA

安世

PNP general purpose double transistor

■ Features ● High current gain ● Low collector-emitter saturation voltage

文件：104.34 Kbytes 页数：3 Pages

KEXIN

科信电子

丝印：3Js；Package：SOT-143；PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)

Preliminary Data ● To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage

文件：94.99 Kbytes 页数：5 Pages

SIEMENS

西门子

NPN general-purpose double transistors

Features * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs

文件：2.29281 Mbytes 页数：13 Pages

NEXPERIA

安世

丝印：3J；Package：SOT143B；PNP general-purpose double transistors

Features and benefits * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs * AEC-Q101 qualified * Small SMD plastic package

文件：801.55 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：3J-；Package：SOT-143B；PNP general purpose double transistor

DESCRIPTION PNP double transistor in a SOT143B plastic package. NPN complement: BCV61. FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V) • Matched pair. APPLICATIONS • For use in applications where the working point must be independent of temperature • Current mirrors.

文件：51.16 Kbytes 页数：8 Pages

PHI

PHI

丝印：3Js；Package：SOT-143；PNP Silicon Double Transistor

PNP Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

文件：49.13 Kbytes 页数：5 Pages

INFINEON

英飞凌

PNP Silicon Double Transistor

PNP Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

文件：49.13 Kbytes 页数：5 Pages

INFINEON

英飞凌

丝印：3K-；Package：SOT-143B；PNP general purpose double transistor

DESCRIPTION PNP double transistor in a SOT143B plastic package. NPN complement: BCV61. FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V) • Matched pair. APPLICATIONS • For use in applications where the working point must be independent of temperature • Current mirrors.

文件：51.16 Kbytes 页数：8 Pages

PHI

PHI