PNP MEDIUM POWER TRANSISTOR

Features • BVCEO > -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 520mW Power Dissipation • Low Saturation Voltage VCE(sat)

文件：419.04 Kbytes 页数：7 Pages

DIODES

美台半导体

80 V, 1 A PNP medium power transistors

General description PNP medium power transistor series. Features ■ High current ■ Two current gain selections ■ High power dissipation capability Applications ■ Linear voltage regulators ■ High-side switches ■ MOSFET drivers ■ Amplifiers

文件：1.12225 Mbytes 页数：22 Pages

恩XP

丝印：BX；Package：HUSON3；80 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.83457 Mbytes 页数：22 Pages

NEXPERIA

安世

丝印：BX；Package：SOT1061；80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal an

文件：250.7 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：CC；Package：DFN2020D-3；45 V/60 V/80 V, 1 A PNP medium power transistors

General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features and benefits ■ High collector current capability IC

文件：903.25 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：CC；Package：SOT1061D；80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Reduced Printed-Circuit Board (PCB) area requirements • Exposed heat sink for excellent thermal and electrical conductivity • Two current gain selections • Leadless very small SMD plastic package with medium power capabili

文件：261.36 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：CC；Package：DFN2020D-3；80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa

文件：261.11 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：F8；Package：DFN2020D-3；80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • Reduced Printed-Circuit Board (PCB) area requirements • Leadless small SMD plastic package with solderable side pads • Exposed heat sink for excellent thermal and electrical conductivity •

文件：266.42 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：F8；Package：DFN2020D-3；80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • Reduced Printed-Circuit Board (PCB) area requirements • Leadless small SMD plastic package with solderable side pads • Exposed heat sink for excellent thermal and electrical conductivity •

文件：268.81 Kbytes 页数：12 Pages

NEXPERIA

安世

NPN SILICON AF MEDIUM POWER TRANSISTORS

THE BC537, BC538 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC537, BC538 ARE COMPLEMENTARY TO THE PNP TYPE BC527, BC528 RESPECTIVELY.

文件：130.32 Kbytes 页数：2 Pages

MICRO-ELECTRONICS