80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Reduced Printed-Circuit Board (PCB) area requirements • Exposed heat sink for excellent thermal and electrical conductivity • Two current gain selections • Leadless very small SMD plastic package with medium power capabili

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80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa

文件：261.11 Kbytes 页数：11 Pages

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丝印：BF；Package：SOT1061；45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 q

文件：252.29 Kbytes 页数：13 Pages

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丝印：BF；Package：SOT1061；45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified

文件：241.37 Kbytes 页数：13 Pages

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丝印：CE；Package：DFN2020D-3；45V/60V/80V, 1A NPN medium power transistors

Features and benefits * High collector current capability IC and ICM * Three current gain selections * Reduced Printed-Circuit Board (PCB) area requirements * Leadless very small SMD plastic package with medium power capability * Exposed heat sink for excellent thermal and electrical cond

文件：1.40185 Mbytes 页数：14 Pages

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丝印：CE；Package：DFN2020D-3；45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa

文件：262.83 Kbytes 页数：11 Pages

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丝印：BG；Package：SOT1061；45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 q

文件：252.29 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：BG；Package：SOT1061；45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified

文件：241.37 Kbytes 页数：13 Pages

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安世

丝印：CF；Package：DFN2020D-3；45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa

文件：262.83 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：CF；Package：DFN2020D-3；45V/60V/80V, 1A NPN medium power transistors

Features and benefits * High collector current capability IC and ICM * Three current gain selections * Reduced Printed-Circuit Board (PCB) area requirements * Leadless very small SMD plastic package with medium power capability * Exposed heat sink for excellent thermal and electrical cond

文件：1.40185 Mbytes 页数：14 Pages

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安世