4.0SMF26A

Marking：CE；Package：SOD-123；3.3 To 48V 400W Surface Mount Transient Voltage Suppressors (TVS)

Features Glasspassivatedchip 400Wpeakpulsepowercapabilitywitha10/1000uswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. MeetAEC-Q101requirement

6.0SMAJ26CA

Marking：CE；Package：DO-214AC；5.0 To 200V 600W Surface Mount Transient Voltage Suppressors (TVS)

Glasspassivatedchip 600Wpeakpulsepowercapabilitywitha10/1000uswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260°C/10satterminals. RoHScompliant Features

74AHCT1G08GW

Marking：CE；Package：SC-74A；2-input AND gate

1.Generaldescription The74AHC1G08;74AHCT1G08isasingle2-inputANDgate.Inputsareovervoltagetolerant.This featureallowstheuseofthesedevicesastranslatorsinmixedvoltageenvironments. 2.Featuresandbenefits •Widesupplyvoltagerangefrom2.0to5.5V •Overvoltagetoler

74AHCT1G08GW

Marking：CE；Package：SOT-353；2-input AND gate

DESCRIPTION The74AHC1G/AHCT1G08isahigh-speedSi-gateCMOSdevice. The74AHC1G/AHCT1G08providesthe2-inputANDfunction. FEATURES •Symmetricaloutputimpedance •Highnoiseimmunity •ESDprotection: –HBMEIA/JESD22-A114-Aexceeds2000V –MMEIA/JESD22-A115-Aexce

74AHCT1G08GW

Marking：CE；Package：SOT-353；2-input AND gate

DESCRIPTION The74AHC1G/AHCT1G08isahigh-speedSi-gateCMOSdevice. The74AHC1G/AHCT1G08providesthe2-inputANDfunction. FEATURES •Symmetricaloutputimpedance •Highnoiseimmunity •ESDprotection: –HBMEIA/JESD22-A114-Aexceeds2000V –MMEIA/JESD22-A115-Aexce

74AHCT1G08GW-Q100

Marking：CE；Package：TSSOP5；2-input AND gate

1.Generaldescription The74AHC1G08-Q100;74AHCT1G08-Q100isasingle2-inputANDgate.Inputsareovervoltage tolerant.Thisfeatureallowstheuseofthesedevicesastranslatorsinmixedvoltageenvironments. ThisproducthasbeenqualifiedtotheAutomotiveElectronicsCouncil(AEC)standa

ADL5506ACBZ-R7

Marking：CE；Package：WLCSP；30 MHz to 4.5 GHz, 45 dB RF Detector

FEATURES ►CompleteRFdetectorfunction ►Typicaldynamicrange:45dB(±1.0dB) ►Frequencyrangefrom30MHzto4.5GHz ►Excellenttemperaturestability ►Stablelinearindecibelresponse ►Poweron/offresponsetime:65ns/145ns(rise/fall) ►−5dBminputpowerapplied ►Operatesfr

AP2121AJ4A-1.8TRG1

Marking：CE；Package：CSP-4；HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Features ·LowDropoutVoltageatIOUT=100mA:150mV Typical(Except1.2V,1.3Vand1.5VVersions) ·LowStandbyCurrent:0.1μATypical ·LowQuiescentCurrent:25μATypical ·HighRippleRejection:70dBTypical（f=1kHz） ·OutputCurrent:MoreThan200mA(300mA Limit) ·ExtremelyLowNoise:

BC54-10PAS

Marking：CE；Package：DFN2020D-3；45V/60V/80V, 1A NPN medium power transistors

Featuresandbenefits *HighcollectorcurrentcapabilityICand ICM *Threecurrentgainselections *ReducedPrinted-CircuitBoard(PCB) arearequirements *LeadlessverysmallSMDplastic packagewithmediumpowercapability *Exposedheatsinkforexcellentthermal andelectricalcond

BC54-10PAS

Marking：CE；Package：DFN2020D-3；45 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorseriesencapsulatedinanultrathinDFN2020D-3(SOT1061D) leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityand visibleandsolderablesidepads. 2.Featuresandbenefits •Highcollectorcurrentcapa