丝印：CEBPackage：TO-92F；NPN HIGH VOLTAGE VIDEO AMPLIFIERS

文件：142.35 Kbytes 页数：2 Pages

MICRO-ELECTRONICS

丝印：CEBPackage：TO-92F；NPN HIGH VOLTAGE VIDEO AMPLIFIERS

文件：142.35 Kbytes 页数：2 Pages

MICRO-ELECTRONICS

丝印：CEBPackage：TO-92F；NPN HIGH VOLTAGE VIDEO AMPLIFIERS

文件：142.35 Kbytes 页数：2 Pages

MICRO-ELECTRONICS

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Type VDSS RDS(ON) ID @VGS CEP01N65 650V 10.5Ω 1.3A 10V CEF01N65 650V 10.5Ω 1.3A 10V CEB01N65 650V 10.5Ω 1.3A 10V ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■

文件：429.92 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

文件：374.19 Kbytes 页数：4 Pages

CET

华瑞

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

文件：75.08 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：539.32 Kbytes 页数：4 Pages

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件：350.41 Kbytes 页数：4 Pages

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件：599.68 Kbytes 页数：4 Pages

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired.

文件：125.19 Kbytes 页数：4 Pages

CET

华瑞