丝印：CEH；Package：SOD-123FL；400 Watt TVS component

Description The PAM39SDxxAL/CAL Series is a transient voltage suppressor array, designed to protect applications such as consumer electronic products, automotive, telecommunications, aerospace and intelligent control systems. This series is available in both unidirectional and bidirectional con

文件：493 Kbytes 页数：7 Pages

PROTEC

丝印：CEH；Package：DO-214AA；Automotive and High Reliability TVS Diodes

文件：1.10451 Mbytes 页数：5 Pages

YINT

音特电子

丝印：658；Package：TSOP-6；MOSFET

Features - Simple drive requirement. - Low on-resistance. - Small package outline.

文件：516.13 Kbytes 页数：6 Pages

COMCHIP

典琦

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 5.2A , RDS(ON) = 26mΩ @VGS = 4.5V. RDS(ON) = 35mΩ @VGS = 2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TSOP-6 package.

文件：267.42 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 5.2A , RDS(ON) = 23mW @VGS = 4.5V. RDS(ON) = 30mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead-free plating ; RoHS compliant.

文件：424.19 Kbytes 页数：4 Pages

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -4.9A , RDS(ON) = 52mW @VGS = -10V. RDS(ON) = 65mW @VGS = -4.5V. RDS(ON) = 119mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant.

文件：718.13 Kbytes 页数：4 Pages

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -4.9A, RDS(ON) = 52mW @VGS = -10V. RDS(ON) = 60mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant. RDS(ON) = 85mW @VGS = -2.5V.

文件：527.45 Kbytes 页数：5 Pages

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 6.2A , RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @VGS = 2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TSOP-6 package.

文件：107.09 Kbytes 页数：2 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 6.1A , RDS(ON) = 34mW @VGS = 10V. RDS(ON) = 40mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant. RDS(ON) = 45mW @VGS = 2.5V. RDS(ON) = 60mW @VGS = 1.8V.

文件：501.79 Kbytes 页数：5 Pages

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -3.5A, RDS(ON) = 85mΩ @VGS = -4.5V. RDS(ON) = 130mΩ @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TSOP-6 package.

文件：131.72 Kbytes 页数：4 Pages

CET

华瑞