型号：SMF160CA；Package：SOD-123FL；Surface Mount Transient Voltage Suppressor Power 200W

文件：1.25369 Mbytes 页数：4 Pages

JUXING

广东钜兴电子

型号：SMF160CA；Package：SOD-123FL；TRANSIENT VOLTAGE SUPPRESSOR

文件：1.01244 Mbytes 页数：4 Pages

CHENDA

辰达半导体

型号：SMF160CA；Package：SOD123FL；Surface mount transient voltage suppressor power 200 watts

文件：438.38 Kbytes 页数：4 Pages

YFWDIODE

佑风微电子

型号：SMF160CA；Package：SOD-123FL；Surface mount transient voltage suppressor power 200 watts

文件：495.59 Kbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

型号：CEP01N65；N-Channel Enhancement Mode Field Effect Transistor

FEATURES Type VDSS RDS(ON) ID @VGS CEP01N65 650V 10.5Ω 1.3A 10V CEF01N65 650V 10.5Ω 1.3A 10V CEB01N65 650V 10.5Ω 1.3A 10V ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■

文件：429.92 Kbytes 页数：4 Pages

CET

华瑞

型号：CEP01N6G；N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

文件：374.19 Kbytes 页数：4 Pages

CET

华瑞

型号：CEP02N6；N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

文件：75.08 Kbytes 页数：5 Pages

CET

华瑞

型号：CEP02N65A；N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

文件：397.41 Kbytes 页数：4 Pages

CET

华瑞

型号：CEP02N65A；N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：539.32 Kbytes 页数：4 Pages

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

型号：CEP02N65D；N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件：350.41 Kbytes 页数：4 Pages

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司