丝印：CEV；Package：SC70(DCK)；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1 Features • Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: –

文件：1.60425 Mbytes 页数：50 Pages

TI

德州仪器

丝印：CEV；Package：SC70；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1 Features • Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: –

文件：1.58588 Mbytes 页数：45 Pages

TI

德州仪器

丝印：CEV；Package：SC70(DCK)；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1 Features • Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: –

文件：1.60425 Mbytes 页数：50 Pages

TI

德州仪器

丝印：CEV；Package：SC70(DCK)；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1 Features • Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: –

文件：1.60425 Mbytes 页数：50 Pages

TI

德州仪器

丝印：CEV；Package：SC70；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1 Features • Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: –

文件：1.58588 Mbytes 页数：45 Pages

TI

德州仪器

丝印：CEV；Package：SC70(DCK)；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1 Features • Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: –

文件：1.60425 Mbytes 页数：50 Pages

TI

德州仪器

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -1.3A, RDS(ON) = 110mW @VGS = -4.5V. RDS(ON) = 160mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-323 package. RoHS compliant.

文件：606.8 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -1.5A, RDS(ON) = 90mW @VGS = -4.5V. RDS(ON) = 120mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-323 package. RoHS compliant.

文件：519.96 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 2.2A, RDS(ON) = 45mW @VGS = 4.5V. RDS(ON) = 55mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-323 package. RoHS compliant. RDS(ON) = 110mW @VGS = 1.8V.

文件：433.4 Kbytes 页数：5 Pages

CET-MOS

华瑞

Absolute-Encoder CEV 65 S/M - PN

文件：451.48 Kbytes 页数：2 Pages

TRELECTRONIC