N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 2.2A, RDS(ON) = 45mW @VGS = 4.5V. RDS(ON) = 55mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-323 package. RoHS compliant. RDS(ON) = 110mW @VGS = 1.8V.

文件：433.4 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes 页数：19 Pages

NSC

国半

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes 页数：19 Pages

NSC

国半

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

文件：23.7 Kbytes 页数：2 Pages

NTE