N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 5.2A , RDS(ON) = 26mΩ @VGS = 4.5V. RDS(ON) = 35mΩ @VGS = 2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TSOP-6 package.

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 5.2A , RDS(ON) = 23mW @VGS = 4.5V. RDS(ON) = 30mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead-free plating ; RoHS compliant.

文件：424.19 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

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CONTENTS

文件：5.88919 Mbytes 页数：24 Pages

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2.3 INCH (58.S mm) 8 X 8 DOT MATRIX STICK DISPLAY

2.3 INCH (58.S mm) 8 X 8 DOT MATRIX STICK DISPLAY DESCRIPTION The GMX2288C 8 X 8, Single Hetero Junction AIGaAs Red dot matrix display. It has a grey face with neutral segment color.

文件：224.03 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

2.3 INCH (58.S mm) 8 X 8 DOT MATRIX STICK DISPLAY

2.3 INCH (58.S mm) 8 X 8 DOT MATRIX STICK DISPLAY DESCRIPTION The GMX2288C 8 X 8, Single Hetero Junction AIGaAs Red dot matrix display. It has a grey face with neutral segment color.

文件：224.03 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体