P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -4.9A , RDS(ON) = 52mW @VGS = -10V. RDS(ON) = 65mW @VGS = -4.5V. RDS(ON) = 119mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant.

文件：718.13 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

文件：308.1 Kbytes 页数：4 Pages

CET

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -4.9A, RDS(ON) = 52mW @VGS = -10V. RDS(ON) = 60mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant. RDS(ON) = 85mW @VGS = -2.5V.

文件：527.45 Kbytes 页数：5 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞