丝印：658；Package：TSOP-6；MOSFET

Features - Simple drive requirement. - Low on-resistance. - Small package outline.

文件：516.13 Kbytes 页数：6 Pages

COMCHIP

典琦

MOSFET

Comchip

典琦

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -3.6A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

文件：392.14 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -3.8A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 86mΩ @VGS = -4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

文件：415.02 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 3.6 Ampere FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：265.45 Kbytes 页数：3 Pages

CHENMKO

力勤