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型号	下载订购	功能描述	制造商上传企业	LOGO
CEB02N6	文件：75.08 Kbytes Page：5 Pages	N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. 文件：75.08 Kbytes 页数：5 Pages	CET 华瑞	CET
CEB02N6	文件：132.65 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor 文件：132.65 Kbytes 页数：4 Pages	CET 华瑞	CET
CEB02N6	文件：300 bytes Page：1 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES\n■ Super high dense cell design for extremely low RDS(ON).\n■ High power and current handing capability.\n■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.\n■ Lead free product is acquired. ■ Super high dense cell design for extremely low RDS(ON).\n■ High power and current handing capability.\n■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.\n■ Lead free product is acquired.;	CET 华瑞	CET
CEB02N65A	文件：539.32 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：539.32 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEB02N65D	文件：350.41 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. 文件：350.41 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEB02N65G	文件：599.68 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. 文件：599.68 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEB02N6A	文件：592.86 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. 文件：592.86 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEB02N6A	文件：125.19 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired. 文件：125.19 Kbytes 页数：4 Pages	CET 华瑞	CET
CEB02N6G	文件：398.08 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. 文件：398.08 Kbytes 页数：4 Pages	CET 华瑞	CET
CEB02N6G	文件：599.54 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. 文件：599.54 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS

技术参数

BVDSS(V)：
650
Rds(on)mΩ@10V：
5000
ID(A)：
2
Qg(nC)@10V(typ)：
7.2
RθJC(℃/W)：
2.4
Pd(W)：
52
Configuration：
Single
Polarity：
N

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	CEB02N6	CET	24+		50000		询价
深圳市宇集芯电子有限公司	CEB02N6	CET	26+	TO-263	90000	进口原装现货假一罚十价格合理	询价
深圳市威尔健半导体有限公司	CEB02N6	ON/安森美	23+	TO-252	69820	终端可以免费供样,支持BOM配单!	询价
深圳市河锋鑫科技有限公司	CEB02N6	CET	22+	TO-263	6000	十年配单,只做原装	询价
深圳市安富世纪电子有限公司	CEB02N6	CET	23+	TO-263	7300	专注配单,只做原装进口现货	询价
深圳市宏捷佳电子科技有限公司	CEB02N6	CET	26+	TO-263	12300	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市纳福半导体有限公司	CEB02N6	CET	2021+	TO-263	5800	原装现货,欢迎来电咨询	询价
深圳市亚泰盈科电子有限公司	CEB02N6	CET	26+	TO-263	16800	原装现货	询价
贸泽芯城（深圳）电子科技有限公司	CEB02N6G	CET/華瑞	23+	TO-263	79999	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市盈慧通电子有限公司	CEB02N65A	CET/華瑞	2511	TO-263	360000	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价

更多CEB02N6供应商更新时间2026-10-28 10:50:00

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