Hand Held Boxes

Hand held case with battery compartment and separate front cover Description Smart looking case moulded in high-impact white ABS with integral PP3 battery compartment accessible by a separate removable cover. The two main halves of the case are held together by two self tapping screws (supplied)

文件：261.55 Kbytes 页数：2 Pages

MULTICOMP

易络盟

丝印：BC5；Package：SMA；400 W Transient Voltage Suppressor

1. General description 400 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMA Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits • Rated peak pulse power at 10/1000 μs waveform: PPPM = 400 W • Reverse standoff

文件：217.72 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：BC546A；Package：TO-923L；NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

文件：301.96 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：BC546A；Package：TO-923L；NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

文件：301.96 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：BC546B；Package：TO-923L；NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

文件：301.96 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：BC546B；Package：TO-923L；NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

文件：301.96 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：BC546C；Package：TO-923L；NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

文件：301.96 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：BC547A；Package：TO-923L；NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

文件：301.96 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：BC547B；Package：TO-923L；NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

文件：301.96 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：BC547B；Package：TO-923L；NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

文件：301.96 Kbytes 页数：8 Pages

ONSEMI

安森美半导体