丝印：C6；Package：DFN2020D-3；45 V/60 V/80 V, 1 A PNP medium power transistors

General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features and benefits ■ High collector current capability IC

文件：903.25 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：C6；Package：SOT1061D；45 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Reduced Printed-Circuit Board (PCB) area requirements • Exposed heat sink for excellent thermal and electrical conductivity • Two current gain selections • Leadless very small SMD plastic package with medium power capabili

文件：261.329 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：C6；Package：DFN2020D-3；45 V, 1 A PNP medium power transistors

1. General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa

文件：263.77 Kbytes 页数：11 Pages

NEXPERIA

安世

PNP Darlington transistor

DESCRIPTION PNP Darlington transistor in a TO-92; SOT54 plastic package. NPN complement: BC517. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • Very high DC current gain (min. 30000). APPLICATIONS • Where very high amplification is required.

文件：44.1 Kbytes 页数：8 Pages

PHI

PHI

TO-92 PACKAGE

TO-92 PACKAGE

文件：373.63 Kbytes 页数：1 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Silicon PNP Darlington Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -30V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): -1.0V(Max) @IC= -0.1A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers

文件：372.7 Kbytes 页数：2 Pages

ISC

无锡固电

Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● High Collector Current

文件：401.89 Kbytes 页数：3 Pages

JIANGSU

长电科技

COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTOR

The BC516(PNP) and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.

文件：68.35 Kbytes 页数：1 Pages

MICRO-ELECTRONICS

PNP Silicon Darlington Transistor

PNP Silicon Darlington Transistor

文件：78.3 Kbytes 页数：1 Pages

SEMTECH_ELEC

先之科半导体

PNP Silicon Darlington Transistor (High current gain High collector current)

PNP Silicon Darlington Transistor ● High current gain ● High collector current ● Complementary type: BC 517 (NPN)

文件：138.8 Kbytes 页数：4 Pages

SIEMENS

西门子