10BJ6.0CA

Marking：C6；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, r epetitionrate(dutycycle):0.01

10SMBJ6.0CA

Marking：C6；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip 1000Wpeakpulsepowercapabilitywitha10/1000μswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. RoHScompliant

74AHC1G4215GW

Marking：C6；Package：TSSOP5；15-stage divider and oscillator

1.Generaldescription 74AHC1G4215isa15-stagedividerandoscillator.Itconsistsofachainof15flip-flops.Each flip-flopdividesthefrequencyofthepreviousflip-flopbytwo,consequentlythe74AHC1G4215 countsupto215=32768.Thesingleinvertingstage(X1toX2)functionsasacr

74AHC1G4215GW-Q100

Marking：C6；Package：TSSOP5；15-stage divider and oscillator

1.Generaldescription 74AHC1G4215-Q100isa15-stagedividerandoscillator.Itconsistsofachainof15flip-flops. Eachflip-flopdividesthefrequencyofthepreviousflip-flopbytwo,consequentlythe 74AHC1G4215-Q100countsupto215=32768.Thesingleinvertingstage(X1toX2)functio

AP2125KS-3.0TRG1

Marking：C6；Package：SC-70-5；300mA, HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features -ExcellentRippleRejection:70dBTypical(1.8VVersion) -LowDropoutVoltage:65mV(IOUT=100mA,3.3VVersion) -LowStandbyCurrent:0.01μATypical -LowQuiescentCurrent:60μATypical -ExtremelyLowNoise:50μVrmsTypical -MaximumOutputCurrent:300mA(Min.) -HighOutputV

BC51-16PAS

Marking：C6；Package：SOT1061D；45 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •ReducedPrinted-CircuitBoard(PCB)arearequirements •Exposedheatsinkforexcellentthermalandelectricalconductivity •Twocurrentgainselections •LeadlessverysmallSMDplasticpackagewithmediumpowercapabili

BC51-16PAS

Marking：C6；Package：DFN2020D-3；45 V/60 V/80 V, 1 A PNP medium power transistors

Generaldescription PNPmediumpowertransistorseriesencapsulatedinanultrathinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityandvisibleandsolderablesidepads. Featuresandbenefits ■HighcollectorcurrentcapabilityIC

BC51-16PAS-Q

Marking：C6；Package：DFN2020D-3；45 V, 1 A PNP medium power transistors

1.Generaldescription PNPmediumpowertransistorseriesencapsulatedinanultrathinDFN2020D-3(SOT1061D) leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityand visibleandsolderablesidepads. 2.Featuresandbenefits •Highcollectorcurrentcapa

BCV64B

Marking：C6；Package：SOT143B；PNP general-purpose double transistor

Featuresandbenefits *Lowcurrent(max.100mA) *Lowvoltage(max.30Vand6V) *AEC-Q101qualified *SmallSMDplasticpackage

BCX51-10T

Marking：C6；Package：SOT89；45 V, 1 A PNP power bipolar transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified