丝印：C6D10065；Package：TO-252-2；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • New 6th Generation Technology • Low Forward Voltage Drop (VF ) • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • Low Leakage Current (Ir ) • Temperature-Independent Switching Behavior • Positive Temperature Coefficient on VF Benefits • Higher System Level Effi

文件：716.6 Kbytes 页数：6 Pages

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丝印：C6D10065；Package：TO-220-2；Silicon Carbide Schottky Diode

文件：708.97 Kbytes 页数：6 Pages

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丝印：C6D10065；Package：TO-252-2；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • New 6th Generation Technology • Low Forward Voltage Drop (VF ) • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • Low Leakage Current (Ir ) • Temperature-Independent Switching Behavior • Positive Temperature Coefficient on VF Benefits • Higher System Level Effi

文件：716.6 Kbytes 页数：6 Pages

WOLFSPEED

丝印：C6D10065；Package：TO-220-2；Silicon Carbide Schottky Diode

文件：708.97 Kbytes 页数：6 Pages

Cree

科锐

6th Generation 650 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.73513 Mbytes 页数：9 Pages

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6th Generation 650 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.0688 Mbytes 页数：6 Pages

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6th Generation 650 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：707.23 Kbytes 页数：7 Pages

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