丝印：C6N；Package：SOT-363；ULTRA LOW CAPACITANCE ESD PROTECTION

Features  IEC61000-4-2(ESD): ± 20 kV Air, ± 15 kV Contact  IEC61000-4-4(EFT): 40 A(5/50 ns)  IEC61000-4-5(Lightning): 5 A(8/20 uS)  Low clamping voltage  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：350.99 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：C6NF30V；Package：TSSOP8；N-channel 30V - 0.020ohm - 6A - TSSOP8 2.5V-drive STripFE TM II Power MOSFET

General features ■ Ultra low threshold gate drive (2.5V) ■ Standard outline for easy automated surface mount assembly ■ Double dice in common drain configuration Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process.

文件：275.14 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：C6N70H；Package：TO-262；700V N-Channel MOSFET

文件：1.38881 Mbytes 页数：10 Pages

WUMC

紫光国微

N-channel 30V - 0.020ohm - 6A - TSSOP8 2.5V-drive STripFE TM II Power MOSFET

General features ■ Ultra low threshold gate drive (2.5V) ■ Standard outline for easy automated surface mount assembly ■ Double dice in common drain configuration Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process.

文件：275.14 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体