10SMBJ6.5CA

Marking：C6V；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip 1000Wpeakpulsepowercapabilitywitha10/1000μswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. RoHScompliant

10SMBJ60CA

Marking：C60；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip 1000Wpeakpulsepowercapabilitywitha10/1000μswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. RoHScompliant

10SMBJ64CA

Marking：C64；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip 1000Wpeakpulsepowercapabilitywitha10/1000μswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. RoHScompliant

1P1G66QDBVRG4Q1

Marking：C66R；Package：SOT-23；SN74LVC1G66-Q1 Single Bilateral Analog Switch

1Features 1•QualifiedforAutomotiveApplications •AEC-Q100QualifiedWiththeFollowingResults: –DeviceTemperatureGrade1:–40°Cto125°C AmbientOperatingTemperatureRange –DeviceHBMClassificationLevelH2 –DeviceCDMClassificationLevelC5 –DeviceMMClassificationLevelM3

1P1G66QDBVRQ1

Marking：C66R；Package：SOT-23；SN74LVC1G66-Q1 Single Bilateral Analog Switch

1Features 1•QualifiedforAutomotiveApplications •AEC-Q100QualifiedWiththeFollowingResults: –DeviceTemperatureGrade1:–40°Cto125°C AmbientOperatingTemperatureRange –DeviceHBMClassificationLevelH2 –DeviceCDMClassificationLevelC5 –DeviceMMClassificationLevelM3

2SC6000

Marking：C6000；Package：SC-76；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SC6052

Marking：C6052；Package：SC-72；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SC6144SG

Marking：C6144；Package：TO-220F-3SG；High-Current Switching Applications

NPNEpitaxialPlanarSiliconTransistor Features •AdoptionofMBITprocess •Largecurrentcapacitance(IC=10A) •Lowcollector-to-emittersaturationvoltage(VCE(sat)=180mV(typ.)) •High-speedswitching(tf=25ns(typ.)) Applications •Relaydrivers,lampdrivers,motordrivers

74AHCT1G66GV

Marking：C66；Package：SC-74A；Single-pole single-throw analog switch

1.Generaldescription The74AHC1G66;74AHCT1G66isasingle-pole,single-throwanalogswitchwithtwoinput/output terminals(nYandnZ)andadigitalenableinput(nE).WhennEisLOW,theanalogswitchis turnedoff.Theenableinputisovervoltagetolerant.Thisfeatureallowstheuseofth

74AHCT1G66GV-Q100

Marking：C66；Package：SC-74A；Single-pole single-throw analog switch

1.Generaldescription The74AHC1G66-Q100;74AHCT1G66-Q100isasingle-pole,single-throwanalogswitchwithtwo input/outputterminals(nYandnZ)andadigitalenableinput(nE).WhennEisLOW,theanalog switchisturnedoff.Theenableinputisovervoltagetolerant.Thisfeatureallowsthe