ACDBMS160-HF

Marking：C6.；Package：SOD-123F；SMD Schottky Barrier Rectifiers

Features -Highcurrentcapability. -Lowforwardvoltage. -Extremelylowthermalresistance. -Forsurfacemountapplication. -AEC-Q101Qualified

AZC615-04S.R7G

Marking：C61XY；Package：SOT23-6L；Low Capacitance ESD Protection Array For High Speed Data Interfaces

Features
ESDProtectfor4high-speedI/Ochannels
ProvideESDprotectionforeachchannelto IEC61000-4-2(ESD)±30kV(air/contact) IEC61000-4-4(EFT)±70A(5/50ns) IEC61000-4-5(Lightning)±10A(8/20μs)forany I/O-to-GND IEC61000-4-5(Lightning)±16A(8/20μs)for VDD-to-GND

C6D04065E

Marking：C6D04065；Package：TO-252-2；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features •New6thGenerationTechnology •LowForwardVoltageDrop(VF ) •ZeroReverseRecoveryCurrent •ZeroForwardRecoveryVoltage •LowLeakageCurrent(Ir ) •Temperature-IndependentSwitchingBehavior •PositiveTemperatureCoefficientonVF Benefits •HigherSystemLevelEffi

C6D06065E

Marking：C6D06065；Package：TO-252-2；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features •New6thGenerationTechnology •LowForwardVoltageDrop(VF ) •ZeroReverseRecoveryCurrent •ZeroForwardRecoveryVoltage •LowLeakageCurrent(Ir ) •Temperature-IndependentSwitchingBehavior •PositiveTemperatureCoefficientonVF Benefits •HigherSystemLevelEffi

C6D08065E

Marking：C6D08065；Package：TO-252-2；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features •New6thGenerationTechnology •LowForwardVoltageDrop(VF ) •ZeroReverseRecoveryCurrent •ZeroForwardRecoveryVoltage •LowLeakageCurrent(Ir ) •Temperature-IndependentSwitchingBehavior •PositiveTemperatureCoefficientonVF Benefits •HigherSystemLevelEffi

C6D10065E

Marking：C6D10065；Package：TO-252-2；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features •New6thGenerationTechnology •LowForwardVoltageDrop(VF ) •ZeroReverseRecoveryCurrent •ZeroForwardRecoveryVoltage •LowLeakageCurrent(Ir ) •Temperature-IndependentSwitchingBehavior •PositiveTemperatureCoefficientonVF Benefits •HigherSystemLevelEffi

C6D16065D

Marking：C6D16065；Package：TO-247-3；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features •New6thGenerationTechnology •LowForwardVoltageDrop(VF ) •ZeroReverseRecoveryCurrent •ZeroForwardRecoveryVoltage •LowLeakageCurrent(Ir ) •Temperature-IndependentSwitchingBehavior •PositiveTemperatureCoefficientonVF Benefits •HigherSystemLevelEffi

C6D20065D

Marking：C6D20065；Package：TO-247-3；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features •New6thGenerationTechnology •LowForwardVoltageDrop(VF ) •ZeroReverseRecoveryCurrent •ZeroForwardRecoveryVoltage •LowLeakageCurrent(Ir ) •Temperature-IndependentSwitchingBehavior •PositiveTemperatureCoefficientonVF Benefits •HigherSystemLevelEffi

CDBMS160-HF

Marking：C6.；Package：SOD-123F；SMD Schottky Barrier Rectifiers

Features -Highcurrentcapability. -Lowforwardvoltage.. -Extremelylowthermalresistance. -Forsurfacemountapplication.

DMC25D1UVT-13

Marking：C6D；Package：TSOT26；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability