NPN Silicon Darlington Transistor

NPN Silicon Darlington Transistor TO-92 Plastic Package Weight approx. 0.19g

文件：79.98 Kbytes 页数：1 Pages

SEMTECH_ELEC

先之科半导体

NPN Silicon Darlington Transistor (High current gain High collector current)

NPN Silicon Darlington Transistor ● High current gain ● High collector current ● Complementary type: BC 516 (PNP)

文件：138.87 Kbytes 页数：4 Pages

SIEMENS

西门子

NPN Darlington Transistor

Features • This Device is Designed for Applications Requiring Extremely High Current Gain at Currents to 1.0 A • Sourced from Process 05 • This is a Pb−Free Device

文件：171.4 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

General Purpose NPN Epitaxial Planar Transistor

Description • The BC517A3 is a darlington amplifier transistor • Pb-free package

文件：270.47 Kbytes 页数：6 Pages

CYSTEKEC

全宇昕科技

NPN Darlington Transistor

Features • This Device is Designed for Applications Requiring Extremely High Current Gain at Currents to 1.0 A • Sourced from Process 05 • This is a Pb−Free Device

文件：171.4 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

45 V, 1 A PNP medium power transistors

General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Features and benefits ■ High current ■ Three current gain selections ■ High power dissipation capability ■ Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT10

文件：242.75 Kbytes 页数：22 Pages

恩XP

丝印：BP；Package：HUSON3；45 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.06086 Mbytes 页数：22 Pages

NEXPERIA

安世

丝印：C4；Package：DFN2020D-3；45 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Reduced Printed-Circuit Board (PCB) area requirements • Exposed heat sink for excellent thermal and electrical conductivity • Two current gain selections • Leadless very small SMD plastic package with medium power capabili

文件：261.329 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：C4；Package：DFN2020D-3；45 V/60 V/80 V, 1 A PNP medium power transistors

General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features and benefits ■ High collector current capability IC

文件：903.25 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：C4；Package：DFN2020D-3；45 V, 1 A PNP medium power transistors

1. General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa

文件：263.77 Kbytes 页数：11 Pages

NEXPERIA

安世