74AHCT1G04GM

Marking：CC；Package：SOT886；Inverter

1.Generaldescription The74AHC1G04;74AHCT1G04isasingleinverter.Inputsareovervoltagetolerant.Thisfeature allowstheuseofthesedevicesastranslatorsinmixedvoltageenvironments. TheAHCdevicehasCMOSinputswitchinglevelsandsupplyvoltagerange2Vto5.5V. TheAHCTdevi

74AHCT1G04GW

Marking：CC；Package：SOT353-1；Inverter

1.Generaldescription The74AHC1G04;74AHCT1G04isasingleinverter.Inputsareovervoltagetolerant.Thisfeature allowstheuseofthesedevicesastranslatorsinmixedvoltageenvironments. TheAHCdevicehasCMOSinputswitchinglevelsandsupplyvoltagerange2Vto5.5V. TheAHCTdevi

74AHCT1G04GW-Q100

Marking：CC；Package：TSSOP5；Inverter

1.Generaldescription The74AHC1G04-Q100;74AHCT1G04-Q100isasingleinverter.Inputsareovervoltagetolerant. Thisfeatureallowstheuseofthesedevicesastranslatorsinmixedvoltageenvironments. TheAHCdevicehasCMOSinputswitchinglevelsandsupplyvoltagerange2Vto5.5V. The

74AHCT1G04GW-Q100

Marking：CC；Package：TSSOP5；Inverter

1.Generaldescription The74AHC1G04-Q100;74AHCT1G04-Q100isasingleinverter.Inputsareovervoltagetolerant. Thisfeatureallowstheuseofthesedevicesastranslatorsinmixedvoltageenvironments. TheAHCdevicehasCMOSinputswitchinglevelsandsupplyvoltagerange2Vto5.5V. The

74AHCT1G04GW-Q100

Marking：CC；Package：TSSOP5；The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V

Generaldescription 74AHC1G04-Q100and74AHCT1G04-Q100arehigh-speedSi-gateCMOSdevices.Theyprovideaninvertingbuffer. TheAHCdevicehasCMOSinputswitchinglevelsandsupplyvoltagerange2Vto5.5V. TheAHCTdevicehasTTLinputswitchinglevelsandsupplyvoltagerange4.5Vto5.

AP2121AJ4A-1.3TRG1

Marking：CC；Package：CSP-4；HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Features ·LowDropoutVoltageatIOUT=100mA:150mV Typical(Except1.2V,1.3Vand1.5VVersions) ·LowStandbyCurrent:0.1μATypical ·LowQuiescentCurrent:25μATypical ·HighRippleRejection:70dBTypical（f=1kHz） ·OutputCurrent:MoreThan200mA(300mA Limit) ·ExtremelyLowNoise:

BC53-16PAS

Marking：CC；Package：DFN2020D-3；45 V/60 V/80 V, 1 A PNP medium power transistors

Generaldescription PNPmediumpowertransistorseriesencapsulatedinanultrathinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityandvisibleandsolderablesidepads. Featuresandbenefits ■HighcollectorcurrentcapabilityIC

BC53-16PAS

Marking：CC；Package：SOT1061D；80 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •ReducedPrinted-CircuitBoard(PCB)arearequirements •Exposedheatsinkforexcellentthermalandelectricalconductivity •Twocurrentgainselections •LeadlessverysmallSMDplasticpackagewithmediumpowercapabili

BC53-16PAS-Q

Marking：CC；Package：DFN2020D-3；80 V, 1 A PNP medium power transistors

1.Generaldescription PNPmediumpowertransistorseriesencapsulatedinanultrathinDFN2020D-3(SOT1061D) leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityand visibleandsolderablesidepads. 2.Featuresandbenefits •Highcollectorcurrentcapa

BCX68-16

Marking：CC；Package：SOT-89；NPN Silicon AF Transistors

NPNSiliconAFTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BCX69(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101