丝印：CC；Package：SOT886；Inverter

1. General description The 74AHC1G04; 74AHCT1G04 is a single inverter. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT devi

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安世安世半导体(中国)有限公司

丝印：CC；Package：SOT353-1；Inverter

1. General description The 74AHC1G04; 74AHCT1G04 is a single inverter. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT devi

文件：222.71 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：CC；Package：TSSOP5；Inverter

1. General description The 74AHC1G04-Q100; 74AHCT1G04-Q100 is a single inverter. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The

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安世安世半导体(中国)有限公司

丝印：CC；Package：TSSOP5；The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V

General description 74AHC1G04-Q100 and 74AHCT1G04-Q100 are high-speed Si-gate CMOS devices. They provide an inverting buffer. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.

文件：201.09 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：CC；Package：TSSOP5；Inverter

1. General description The 74AHC1G04-Q100; 74AHCT1G04-Q100 is a single inverter. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The

文件：233.83 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：CC；Package：CSP-4；HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Features · Low Dropout Voltage at IOUT=100mA: 150mV Typical (Except 1.2V, 1.3V and 1.5V Versions) · Low Standby Current: 0.1μA Typical · Low Quiescent Current: 25μA Typical · High Ripple Rejection: 70dB Typical （f=1kHz） · Output Current: More Than 200mA (300mA Limit) · Extremely Low Noise:

文件：1.19367 Mbytes 页数：29 Pages

DIODES

美台半导体

丝印：CC；Package：SOT1061D；80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Reduced Printed-Circuit Board (PCB) area requirements • Exposed heat sink for excellent thermal and electrical conductivity • Two current gain selections • Leadless very small SMD plastic package with medium power capabili

文件：261.36 Kbytes 页数：11 Pages

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丝印：CC；Package：DFN2020D-3；45 V/60 V/80 V, 1 A PNP medium power transistors

General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features and benefits ■ High collector current capability IC

文件：903.25 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：CC；Package：DFN2020D-3；80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa

文件：261.11 Kbytes 页数：11 Pages

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安世安世半导体(中国)有限公司

丝印：CC；Package：SOT-89；NPN Silicon AF Transistors

NPN Silicon AF Transistors • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BCX69 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

文件：45.92 Kbytes 页数：4 Pages

Infineon

英飞凌