isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 140A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：297.37 Kbytes 页数：2 Pages

ISC

无锡固电

600V 27A a MOS Power Transistor

General Description The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche

文件：301.02 Kbytes 页数：6 Pages

AOSMD

万国半导体

600V 27A a MOS

General Description The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche

文件：542.28 Kbytes 页数：7 Pages

AOSMD

万国半导体

600V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary αMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC,Flyback and LLC topologies• Micro inverter with DC/AC inverter topology

文件：438.58 Kbytes 页数：6 Pages

AOSMD

万国半导体

80V N-Channel MOSFET

General Description The AOT282L & AOB282L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This d

文件：281.9 Kbytes 页数：6 Pages

AOSMD

万国半导体

TO220 PACKAGE MARKING DESCRIPTION

General Description The AOT284L & AOB284L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimizeddue to an extremely low combination of RDS(ON), Ciss and Coss.

文件：96.63 Kbytes 页数：1 Pages

AOSMD

万国半导体

TO220 PACKAGE MARKING DESCRIPTION

General Description The AOT284L & AOB284L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimizeddue to an extremely low combination of RDS(ON), Ciss and Coss.

文件：96.63 Kbytes 页数：1 Pages

AOSMD

万国半导体

80V N-Channel MOSFET

General Description The AOT286L/AOB286L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device

文件：289.93 Kbytes 页数：6 Pages

AOSMD

万国半导体

80V N-Channel MOSFET

General Description The AOT288L & AOB288L & AOTF288L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss a

文件：369.28 Kbytes 页数：7 Pages

AOSMD

万国半导体

100V N-Channel MOSFET

General Description The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlle

文件：304.8 Kbytes 页数：6 Pages

AOSMD

万国半导体