isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=35A@ TC=25℃ • Drain Source Voltage- : VDSS=60V(Min) • Static Drain-Source On-Resistance : RDS(on) = 18mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

文件：303.97 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

文件：1.2731 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 127A@ TC=25℃ • Drain Source Voltage- : VDSS=75V(Min) • Static Drain-Source On-Resistance : RDS(on) = 11.3mΩ (Max) • 100 avalanche tested • Minimum Lot-to-

文件：305.11 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT(F)474/L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current switchin

文件：288.34 Kbytes 页数：7 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT(F)474/L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current switchin

文件：288.34 Kbytes 页数：7 Pages

AOSMD

万国半导体

600V 4A a MOS TM Power Transistor

General Description The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche c

文件：301.91 Kbytes 页数：6 Pages

AOSMD

万国半导体

600V 4A aMOSTM Power Transistor

General Description The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche c

文件：40.22 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel 6 50V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：1.10659 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=4A@ TC=25℃ • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.9Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot

文件：306.05 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.3mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：297.14 Kbytes 页数：2 Pages

ISC

无锡固电