600V 37A a MOS

General Description The AOT42S60 & AOB42S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability th

文件：511.62 Kbytes 页数：6 Pages

AOSMD

万国半导体

600V 37A a MOS TM Power Transistor

General Description The AOT42S60L & AOB42S60L have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capabilit

文件：529.06 Kbytes 页数：6 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=80A@ TC=25℃ • Drain Source Voltage- : VDSS=75V(Min) • Static Drain-Source On-Resistance : RDS(on) = 11.5mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lo

文件：304.21 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT430 is Pb-free (meets ROHS & Sony 259 specifications). Fea

文件：80.21 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel 80 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested APPLICATIONS • Primary Side Switching • Synchronous Rectification • DC/AC Inverters • LED Backlighting

文件：999.76 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

文件：1.28919 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT460/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. AOT460and AOT460L are electrically identical. -RoHS Compliant -Halogen Free Features

文件：71.31 Kbytes 页数：5 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=85A@ TC=25℃ • Drain Source Voltage- : VDSS=60V(Min) • Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

文件：304.2 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT462 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. Standard Product AOT462 is Pb-free (meets ROHS & Sony 259 specifications). Features VD

文件：68.71 Kbytes 页数：5 Pages

AOSMD

万国半导体

60V N-Channel MOSFET

General Description The AOT462L/AOB462L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Su

文件：445.9 Kbytes 页数：6 Pages

AOSMD

万国半导体