100V N-Channel MOSFET

General Description The AOT296L/AOB296L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device

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AOSMD

万国半导体

100V N-Channel MOSFET

General Description The AOT298L & AOB298L & AOTF298L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. In addition, switch

文件：383.75 Kbytes 页数：7 Pages

AOSMD

万国半导体

500V 29A a MOS Power Transistor

General Description The AOT29S50 & AOB29S50 & AOTF29S50 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

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AOSMD

万国半导体

600V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary aMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies• Silver ATX ,adapter, TV, lighting, Server power

文件：503.39 Kbytes 页数：6 Pages

AOSMD

万国半导体

600V, a MOS5 TM N-Channel Power Transistor

General Description • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies • Silver ATX ,adapter, TV, lighting,

文件：652.24 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT400 is Pb-free (meets ROHS & Sony 259 specifications). AOT4

文件：71.96 Kbytes 页数：5 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 110A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：297.44 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT400 is Pb-free (meets ROHS & Sony 259 specifications). AOT4

文件：71.96 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT402 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT402 is Pb-free (meets ROHS & Sony 259 specifications). AOT4

文件：68.64 Kbytes 页数：5 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 110A@ TC=25℃ ·Drain Source Voltage : VDSS= 105V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：297.92 Kbytes 页数：2 Pages

ISC

无锡固电