500V, 14A N-Channel MOSFET

General Description The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avala

文件：263.81 Kbytes 页数：6 Pages

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600V, 15A Alpha IGBT with Diode

General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac

文件：658.58 Kbytes 页数：9 Pages

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650V, 15A Alpha IGBT TM With soft and fast recovery anti-parallel diode

General Description • Latest AlphaIGBT (αIGBT) Technology • 650V Breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient Turn-On di/dt controllability • Low VCE(sat) enables high efficiencies • Low Turn-Off switching loss and softness • Very good EMI behavior •

文件：558.6 Kbytes 页数：9 Pages

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650V, 15A AlphaIGBTTM With Soft and Fast Recovery Anti-Parallel Diode

General Description • Latest AlphaIGBT (αIGBT) technology• 650V breakdown voltage• Very fast and soft recovery freewheeling diode• High efficient turn-on di/dt controllability• Low VCE(sat) enables high efficiencies• Low turn-off switching loss and softness• Very good EMI behavior• High short-cir

文件：589.96 Kbytes 页数：8 Pages

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600V 15A a MOS Power Transistor

General Description The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche

文件：348.86 Kbytes 页数：6 Pages

AOSMD

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600V 15A a MOS power Transistor

General Description The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche

文件：348.86 Kbytes 页数：6 Pages

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650V 15A a MOS Power Transistor

General Description The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

文件：308.26 Kbytes 页数：7 Pages

AOSMD

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60V N-Channel Rugged Planar MOSFET

General Description The AOT1606L/AOB1606L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current sw

文件：410.27 Kbytes 页数：6 Pages

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60V N-Channel Rugged Planar MOSFET

General Description The AOT1608L/AOB1608L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current sw

文件：421.17 Kbytes 页数：6 Pages

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600V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary αMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC,Flyback and LLC topologies• Micro inverter with DC/AC inverter topology

文件：440.45 Kbytes 页数：6 Pages

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